Infineon 650V CoolMOS CFD7 SJ Power Device Type N-Channel MOSFET, 63 A, 650 V Enhancement, 8-Pin PG-HSOF-8
- RS Stock No.:
- 284-899
- Mfr. Part No.:
- IPT65R040CFD7XTMA1
- Manufacturer:
- Infineon
The image is for reference only, please refer to product details and specifications
Subtotal (1 reel of 2000 units)*
HK$116,516.00
FREE delivery for orders over HK$250.00
Temporarily out of stock
- Shipping from 07 December 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Reel* |
|---|---|---|
| 2000 + | HK$58.258 | HK$116,516.00 |
*price indicative
- RS Stock No.:
- 284-899
- Mfr. Part No.:
- IPT65R040CFD7XTMA1
- Manufacturer:
- Infineon
Specifications
Product overview and Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 63A | |
| Maximum Drain Source Voltage Vds | 650V | |
| Package Type | PG-HSOF-8 | |
| Series | 650V CoolMOS CFD7 SJ Power Device | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 40mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Source Voltage Vgs | 20V | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | 1V | |
| Typical Gate Charge Qg @ Vgs | 97nC | |
| Maximum Power Dissipation Pd | 347W | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | JEDEC | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 63A | ||
Maximum Drain Source Voltage Vds 650V | ||
Package Type PG-HSOF-8 | ||
Series 650V CoolMOS CFD7 SJ Power Device | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 40mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Source Voltage Vgs 20V | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf 1V | ||
Typical Gate Charge Qg @ Vgs 97nC | ||
Maximum Power Dissipation Pd 347W | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals JEDEC | ||
The Infineon MOSFET is a cutting edge MOSFET designed for high efficiency switching applications. This product exemplifies superior thermal performance, making it Ideal for use in demanding environments such as server and telecom sectors. With its innovative CoolMOS CFD7 technology, it promises outstanding reliability and efficiency, particularly in resonant switching topologies, including LLC and phase shift full bridge applications. This MOSFET advances upon its predecessor with improved switching capabilities and a low on state resistance, optimising power density and enhancing the overall effectiveness of your designs. Built to meet the rigorous standards of industrial applications, the device provides excellent hard commutation ruggedness while maintaining exceptional performance across a broad temperature range.
Ultra fast body diode minimises switching losses
Best in class RDS(on) for efficiency improvements
Robust against hard commutation for reliability
Handles increased bus voltage for safety
Optimised for high power density in Compact designs
Excels in light load conditions for industrial SMPS applications
Related links
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