Infineon 650V CoolMOS CFD7 SJ Power Device Type N-Channel MOSFET, 63 A, 650 V Enhancement, 8-Pin PG-HSOF-8

RS Stock No.:: 284-900
Mfr. Part No.:: IPT65R040CFD7XTMA1
Manufacturer:: Infineon

Infineon 650V CoolMOS CFD7 SJ Power Device Type N-Channel MOSFET, 63 A, 650 V Enhancement, 8-Pin PG-HSOF-8

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HK$81.16

FREE delivery for orders over HK$250.00

In Stock

96 unit(s) ready to ship from another location

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Units	Per unit
1 - 9	HK$81.16
10 - 99	HK$73.08
100 - 499	HK$67.32
500 - 999	HK$62.45
1000 +	HK$56.03

*price indicative

RS Stock No.:: 284-900
Mfr. Part No.:: IPT65R040CFD7XTMA1
Manufacturer:: Infineon

Specifications

Product overview and Technical data sheets

Legislation and Compliance

Product Details

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Select all	Attribute	Value
	Brand	Infineon
	Channel Type	Type N
	Product Type	MOSFET
	Maximum Continuous Drain Current Id	63A
	Maximum Drain Source Voltage Vds	650V
	Package Type	PG-HSOF-8
	Series	650V CoolMOS CFD7 SJ Power Device
	Mount Type	Surface
	Pin Count	8
	Maximum Drain Source Resistance Rds	40mΩ
	Channel Mode	Enhancement
	Forward Voltage Vf	1V
	Minimum Operating Temperature	-55°C
	Typical Gate Charge Qg @ Vgs	97nC
	Maximum Gate Source Voltage Vgs	20 V
	Maximum Power Dissipation Pd	347W
	Maximum Operating Temperature	150°C
	Standards/Approvals	JEDEC

	Select all
	Brand Infineon
	Channel Type Type N
	Product Type MOSFET
	Maximum Continuous Drain Current Id 63A
	Maximum Drain Source Voltage Vds 650V
	Package Type PG-HSOF-8
	Series 650V CoolMOS CFD7 SJ Power Device
	Mount Type Surface
	Pin Count 8
	Maximum Drain Source Resistance Rds 40mΩ
	Channel Mode Enhancement
	Forward Voltage Vf 1V
	Minimum Operating Temperature -55°C
	Typical Gate Charge Qg @ Vgs 97nC
	Maximum Gate Source Voltage Vgs 20 V
	Maximum Power Dissipation Pd 347W
	Maximum Operating Temperature 150°C
	Standards/Approvals JEDEC

Datasheet - IPT65R040CFD7XTMA1

The Infineon MOSFET is a cutting edge MOSFET designed for high efficiency switching applications. This product exemplifies superior thermal performance, making it Ideal for use in demanding environments such as server and telecom sectors. With its innovative CoolMOS CFD7 technology, it promises outstanding reliability and efficiency, particularly in resonant switching topologies, including LLC and phase shift full bridge applications. This MOSFET advances upon its predecessor with improved switching capabilities and a low on state resistance, optimising power density and enhancing the overall effectiveness of your designs. Built to meet the rigorous standards of industrial applications, the device provides excellent hard commutation ruggedness while maintaining exceptional performance across a broad temperature range.

Ultra fast body diode minimises switching losses

Best in class RDS(on) for efficiency improvements

Robust against hard commutation for reliability

Handles increased bus voltage for safety

Optimised for high power density in Compact designs

Excels in light load conditions for industrial SMPS applications

Infineon 650V CoolMOS CFD7 SJ Power Device Type N-Channel MOSFET, 63 A, 650 V Enhancement, 8-Pin PG-HSOF-8

FREE delivery for orders over HK$250.00

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