ROHM HP8 2 Type N-Channel MOSFET, 12 A, 40 V Enhancement, 8-Pin TO-263 HT8KB5TB1
- RS Stock No.:
- 264-763
- Mfr. Part No.:
- HT8KB5TB1
- Manufacturer:
- ROHM
The image is for reference only, please refer to product details and specifications
Bulk discount available
Subtotal (1 tape of 10 units)*
HK$47.39
FREE delivery for orders over HK$250.00
In Stock
- 100 unit(s) ready to ship from another location
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Tape* |
|---|---|---|
| 10 - 90 | HK$4.739 | HK$47.39 |
| 100 - 240 | HK$4.506 | HK$45.06 |
| 250 - 490 | HK$4.174 | HK$41.74 |
| 500 - 990 | HK$3.842 | HK$38.42 |
| 1000 + | HK$3.698 | HK$36.98 |
*price indicative
- RS Stock No.:
- 264-763
- Mfr. Part No.:
- HT8KB5TB1
- Manufacturer:
- ROHM
Specifications
Product overview and Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | ROHM | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 12A | |
| Maximum Drain Source Voltage Vds | 40V | |
| Series | HP8 | |
| Package Type | TO-263 | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 47mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 13W | |
| Maximum Gate Source Voltage Vgs | ±20 V | |
| Forward Voltage Vf | 1.2V | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | No | |
| Number of Elements per Chip | 2 | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand ROHM | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 12A | ||
Maximum Drain Source Voltage Vds 40V | ||
Series HP8 | ||
Package Type TO-263 | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 47mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 13W | ||
Maximum Gate Source Voltage Vgs ±20 V | ||
Forward Voltage Vf 1.2V | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals No | ||
Number of Elements per Chip 2 | ||
Automotive Standard No | ||
The ROHM 40V 12A Dual Nch+Pch is a low on-resistance MOSFET ideal for switching applications.
High Power small mold Package (HSMT8)
Pb-free lead plating and RoHS compliant
Halogen Free
Related links
- ROHM HP8 2 Type N-Channel MOSFET 40 V Enhancement, 8-Pin HSOP-8 HP8KB7TB1
- ROHM HP8 2 Type N-Channel MOSFET 8-Pin HSOP-8 HP8KC7TB1
- ROHM HP8 2 Type N-Channel MOSFET 8-Pin HSOP-8 HP8KC6TB1
- ROHM HP8 2 Type N-Channel MOSFET 60 V Enhancement, 8-Pin HSMT-8 HT8KC5TB1
- ROHM HP8 2 Type P 60 V Enhancement, 8-Pin HSOP-8 HP8MC5TB1
- ROHM Nch+Nch HP8 2 Type N-Channel MOSFET 8-Pin HSOP-8 HP8KB6TB1
- ROHM Dual (Nch+Pch) HP8 2 Type P 40 V Enhancement, 8-Pin HSOP-8 HP8MB5TB1
- onsemi Isolated PowerTrench 2 Type N-Channel Dual N-Channel Power Trench MOSFET 40 V Enhancement, 8-Pin Power 33