onsemi Isolated PowerTrench 2 Type N-Channel Dual N-Channel Power Trench MOSFET, 12 A, 40 V Enhancement, 8-Pin Power 33

RS Stock No.:: 806-3504
Mfr. Part No.:: FDMC8030
Manufacturer:: onsemi

onsemi Isolated PowerTrench 2 Type N-Channel Dual N-Channel Power Trench MOSFET, 12 A, 40 V Enhancement, 8-Pin Power 33

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Bulk discount available

Subtotal (1 pack of 5 units)*

HK$64.50

FREE delivery for orders over HK$250.00

Last RS stock

370 left, ready to ship from another location
Final 1,645 unit(s) shipping from 29 January 2026

Units	Per unit	Per Pack*
5 - 745	HK$12.90	HK$64.50
750 - 1495	HK$12.60	HK$63.00
1500 +	HK$12.38	HK$61.90

*price indicative

RS Stock No.:: 806-3504
Mfr. Part No.:: FDMC8030
Manufacturer:: onsemi

Specifications

Product overview and Technical data sheets

Legislation and Compliance

Product Details

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Select all	Attribute	Value
	Brand	onsemi
	Product Type	Dual N-Channel Power Trench MOSFET
	Channel Type	Type N
	Maximum Continuous Drain Current Id	12A
	Maximum Drain Source Voltage Vds	40V
	Package Type	Power 33
	Series	PowerTrench
	Mount Type	Surface
	Pin Count	8
	Maximum Drain Source Resistance Rds	10mΩ
	Channel Mode	Enhancement
	Forward Voltage Vf	1.2V
	Typical Gate Charge Qg @ Vgs	30nC
	Maximum Power Dissipation Pd	1.9W
	Minimum Operating Temperature	-55°C
	Maximum Gate Source Voltage Vgs	±12 V
	Maximum Operating Temperature	150°C
	Transistor Configuration	Isolated
	Width	3 mm
	Height	0.75mm
	Length	3mm
	Standards/Approvals	Lead-Free and RoHS
	Number of Elements per Chip	2
	Automotive Standard	No

	Select all
	Brand onsemi
	Product Type Dual N-Channel Power Trench MOSFET
	Channel Type Type N
	Maximum Continuous Drain Current Id 12A
	Maximum Drain Source Voltage Vds 40V
	Package Type Power 33
	Series PowerTrench
	Mount Type Surface
	Pin Count 8
	Maximum Drain Source Resistance Rds 10mΩ
	Channel Mode Enhancement
	Forward Voltage Vf 1.2V
	Typical Gate Charge Qg @ Vgs 30nC
	Maximum Power Dissipation Pd 1.9W
	Minimum Operating Temperature -55°C
	Maximum Gate Source Voltage Vgs ±12 V
	Maximum Operating Temperature 150°C
	Transistor Configuration Isolated
	Width 3 mm
	Height 0.75mm
	Length 3mm
	Standards/Approvals Lead-Free and RoHS
	Number of Elements per Chip 2
	Automotive Standard No

PowerTrench® Dual N-Channel MOSFET, Fairchild Semiconductor

ON Semis PowerTrench® MOSFETS are optimised power switched that offer increased system efficiency and power density. They combine small gate charge, small reverse recovery and a soft reverse recovery body diode to contribute to fast switching of synchronous rectification in AC/DC power supplies.

The soft body diode performance of the PowerTrench® MOSFETs is able to eliminate snubber circuit or replace a higher voltage rating MOSFET.

MOSFET Transistors, ON Semi

ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The Advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.

ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.

onsemi Isolated PowerTrench 2 Type N-Channel Dual N-Channel Power Trench MOSFET, 12 A, 40 V Enhancement, 8-Pin Power 33

FREE delivery for orders over HK$250.00

PowerTrench® Dual N-Channel MOSFET, Fairchild Semiconductor

MOSFET Transistors, ON Semi

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