ROHM QH8 2 Type N-Channel MOSFET, 100 V Enhancement, 8-Pin TSMT-8 QH8KE5TCR

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Subtotal (1 tape of 25 units)*

HK$75.70

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Units
Per unit
Per Tape*
25 - 75HK$3.028HK$75.70
100 - 225HK$2.876HK$71.90
250 - 475HK$2.664HK$66.60
500 - 975HK$2.452HK$61.30
1000 +HK$2.364HK$59.10

*price indicative

Packaging Options:
RS Stock No.:
264-562
Mfr. Part No.:
QH8KE5TCR
Manufacturer:
ROHM
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Brand

ROHM

Channel Type

Type N

Product Type

MOSFET

Maximum Drain Source Voltage Vds

100V

Package Type

TSMT-8

Series

QH8

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

202mΩ

Channel Mode

Enhancement

Maximum Gate Source Voltage Vgs

±20 V

Maximum Power Dissipation Pd

1.5W

Typical Gate Charge Qg @ Vgs

2.8nC

Forward Voltage Vf

1.2V

Minimum Operating Temperature

-55°C

Maximum Operating Temperature

150°C

Standards/Approvals

No

Number of Elements per Chip

2

Automotive Standard

No

The ROHM 100V 2.0A dual N-channel power MOSFET in a TSMT8 package is designed for high-efficiency switching power supply and motor drive applications.

Low on-resistance

Small Surface Mount Package TSMT8

Pb-free plating and RoHS compliant

Halogen Free

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