onsemi NVMFWS Type N-Channel MOSFET, 156 A, 80 V Enhancement, 5-Pin DFNW-5 NVMFWS2D5N08XT1G
- RS Stock No.:
- 220-574
- Mfr. Part No.:
- NVMFWS2D5N08XT1G
- Manufacturer:
- onsemi
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Bulk discount available
Subtotal (1 tape of 5 units)*
HK$85.80
FREE delivery for orders over HK$250.00
In Stock
- 1,335 unit(s) ready to ship from another location
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Tape* |
|---|---|---|
| 5 - 45 | HK$17.16 | HK$85.80 |
| 50 - 95 | HK$16.30 | HK$81.50 |
| 100 - 495 | HK$15.10 | HK$75.50 |
| 500 - 995 | HK$13.88 | HK$69.40 |
| 1000 + | HK$13.38 | HK$66.90 |
*price indicative
- RS Stock No.:
- 220-574
- Mfr. Part No.:
- NVMFWS2D5N08XT1G
- Manufacturer:
- onsemi
Specifications
Product overview and Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | onsemi | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 156A | |
| Maximum Drain Source Voltage Vds | 80V | |
| Package Type | DFNW-5 | |
| Series | NVMFWS | |
| Mount Type | Surface | |
| Pin Count | 5 | |
| Maximum Drain Source Resistance Rds | 2.55mΩ | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | 0.82V | |
| Maximum Power Dissipation Pd | 133W | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Typical Gate Charge Qg @ Vgs | 45nC | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | AEC-Q101 | |
| Length | 5mm | |
| Width | 6 mm | |
| Automotive Standard | AEC-Q | |
| Select all | ||
|---|---|---|
Brand onsemi | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 156A | ||
Maximum Drain Source Voltage Vds 80V | ||
Package Type DFNW-5 | ||
Series NVMFWS | ||
Mount Type Surface | ||
Pin Count 5 | ||
Maximum Drain Source Resistance Rds 2.55mΩ | ||
Channel Mode Enhancement | ||
Forward Voltage Vf 0.82V | ||
Maximum Power Dissipation Pd 133W | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Typical Gate Charge Qg @ Vgs 45nC | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals AEC-Q101 | ||
Length 5mm | ||
Width 6 mm | ||
Automotive Standard AEC-Q | ||
- COO (Country of Origin):
- MY
The ON Semiconductor Power MOSFET in a 5x6mm flat lead package designed for compact and efficient designs and including high thermal performance. Wettable Flank Option available for Enhanced Optical Inspection. AEC-Q101 Qualified MOSFET and PPAP capable suitable for automotive applications.
Halogen Free
RoHS Compliant
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