onsemi NVMFWS Type N-Channel MOSFET, 121 A, 40 V Enhancement, 5-Pin DFNW-5 NVMFWS2D3N04XMT1G
- RS Stock No.:
- 220-573
- Mfr. Part No.:
- NVMFWS2D3N04XMT1G
- Manufacturer:
- onsemi
The image is for reference only, please refer to product details and specifications
Bulk discount available
Subtotal (1 tape of 10 units)*
HK$75.50
Add 40 units to get free delivery
In Stock
- Plus 1,500 unit(s) shipping from 23 February 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Tape* |
|---|---|---|
| 10 - 90 | HK$7.55 | HK$75.50 |
| 100 - 240 | HK$7.16 | HK$71.60 |
| 250 - 490 | HK$6.66 | HK$66.60 |
| 500 - 990 | HK$6.12 | HK$61.20 |
| 1000 + | HK$5.88 | HK$58.80 |
*price indicative
- RS Stock No.:
- 220-573
- Mfr. Part No.:
- NVMFWS2D3N04XMT1G
- Manufacturer:
- onsemi
Specifications
Product overview and Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | onsemi | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 121A | |
| Maximum Drain Source Voltage Vds | 40V | |
| Series | NVMFWS | |
| Package Type | DFNW-5 | |
| Mount Type | Surface | |
| Pin Count | 5 | |
| Maximum Drain Source Resistance Rds | 2.35mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 22.2nC | |
| Maximum Power Dissipation Pd | 63W | |
| Forward Voltage Vf | 0.82V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | ±20 V | |
| Maximum Operating Temperature | 175°C | |
| Length | 5mm | |
| Standards/Approvals | AECQ101 Qualified and PPAP Capable | |
| Width | 6 mm | |
| Automotive Standard | AEC-Q | |
| Select all | ||
|---|---|---|
Brand onsemi | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 121A | ||
Maximum Drain Source Voltage Vds 40V | ||
Series NVMFWS | ||
Package Type DFNW-5 | ||
Mount Type Surface | ||
Pin Count 5 | ||
Maximum Drain Source Resistance Rds 2.35mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 22.2nC | ||
Maximum Power Dissipation Pd 63W | ||
Forward Voltage Vf 0.82V | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs ±20 V | ||
Maximum Operating Temperature 175°C | ||
Length 5mm | ||
Standards/Approvals AECQ101 Qualified and PPAP Capable | ||
Width 6 mm | ||
Automotive Standard AEC-Q | ||
- COO (Country of Origin):
- MY
The ON Semiconductor MOSFET has Low Capacitance to Minimize Driver Losses. This device are Pb−Free, Halogen Free/BFR Free.
Low RDS(on) to Minimize Conduction Losses
RoHS Compliant
Related links
- onsemi NVMFWS Type N-Channel MOSFET 80 V Enhancement, 5-Pin DFNW-5 NVMFWS2D5N08XT1G
- onsemi NVMFWS Type N-Channel MOSFET 80 V Enhancement, 5-Pin DFNW-5 NVMFWS1D5N08XT1G
- onsemi NVM Type N-Channel Single MOSFETs 40 V Enhancement, 5-Pin DFNW-5 NVMFWS2D9N04XMT1G
- onsemi NVM Type N-Channel Single MOSFETs 40 V Enhancement, 5-Pin DFNW-5 NVMFWS1D1N04XMT1G
- onsemi NVM Type N-Channel Single MOSFETs 40 V Enhancement, 5-Pin DFNW-5 NVMFWS1D3N04XMT1G
- onsemi NVM Type N-Channel Single MOSFETs 40 V Enhancement, 5-Pin DFNW-5 NVMFWS0D63N04XMT1G
- onsemi NVMFWS Type N-Channel MOSFET 80 V Enhancement, 8-Pin SO-8FL NVMFWS1D9N08XT1G
- Infineon IPP Type N-Channel MOSFET 40 V Enhancement, 3-Pin TO-220 IPP026N04NF2SAKMA1