onsemi NTH Type N-Channel MOSFET, 151 A, 1200 V Enhancement, 4-Pin TO-247-4L NTH4L013N120M3S
- RS Stock No.:
- 220-567
- Mfr. Part No.:
- NTH4L013N120M3S
- Manufacturer:
- onsemi
The image is for reference only, please refer to product details and specifications
Bulk discount available
Subtotal (1 pack of 1 unit)*
HK$249.00
Add 2 packs to get free delivery
In Stock
- Plus 418 unit(s) shipping from 23 February 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Pack(s) | Per Pack |
|---|---|
| 1 - 9 | HK$249.00 |
| 10 - 99 | HK$224.10 |
| 100 + | HK$206.70 |
*price indicative
- RS Stock No.:
- 220-567
- Mfr. Part No.:
- NTH4L013N120M3S
- Manufacturer:
- onsemi
Specifications
Product overview and Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | onsemi | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 151A | |
| Maximum Drain Source Voltage Vds | 1200V | |
| Package Type | TO-247-4L | |
| Series | NTH | |
| Mount Type | Through Hole | |
| Pin Count | 4 | |
| Maximum Drain Source Resistance Rds | 13mΩ | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | 4.7V | |
| Typical Gate Charge Qg @ Vgs | 254nC | |
| Maximum Power Dissipation Pd | 682W | |
| Maximum Gate Source Voltage Vgs | 22 V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 175°C | |
| Height | 5mm | |
| Width | 15.6 mm | |
| Standards/Approvals | Halide Free and RoHS with Exemption 7a | |
| Length | 16.2mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand onsemi | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 151A | ||
Maximum Drain Source Voltage Vds 1200V | ||
Package Type TO-247-4L | ||
Series NTH | ||
Mount Type Through Hole | ||
Pin Count 4 | ||
Maximum Drain Source Resistance Rds 13mΩ | ||
Channel Mode Enhancement | ||
Forward Voltage Vf 4.7V | ||
Typical Gate Charge Qg @ Vgs 254nC | ||
Maximum Power Dissipation Pd 682W | ||
Maximum Gate Source Voltage Vgs 22 V | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 175°C | ||
Height 5mm | ||
Width 15.6 mm | ||
Standards/Approvals Halide Free and RoHS with Exemption 7a | ||
Length 16.2mm | ||
Automotive Standard No | ||
- COO (Country of Origin):
- CN
The ON Semiconductor MOSFETs is optimized for fast switching applications. Planar technology works reliably with negative gate voltage drive and turn off spikes on the gate. This family has optimum performance when driven with 18V gate drive but also works well with 15V gate drive.
Halide Free
RoHS Compliant
Related links
- onsemi NTH Type N-Channel MOSFET 650 V Enhancement, 4-Pin TO-247-4L NTH4L023N065M3S
- onsemi NTH Type N-Channel MOSFET 750 V Enhancement, 7-Pin TO-247-4L NTH4L018N075SC1
- onsemi NTH Type N-Channel MOSFET 1200 V Enhancement, 4-Pin TO-247
- onsemi NTH Type N-Channel MOSFET 1200 V Enhancement, 4-Pin TO-247
- onsemi NTH Type N-Channel MOSFET 1200 V Enhancement, 4-Pin TO-247
- onsemi NTH Type N-Channel MOSFET 1200 V Enhancement, 4-Pin TO-247
- onsemi NTH Type N-Channel MOSFET 1200 V Enhancement, 4-Pin TO-247
- onsemi NTH Type N-Channel MOSFET 1200 V Enhancement, 4-Pin TO-247 NTH4L020N120SC1