onsemi NTBL Type N-Channel MOSFET, 37 A, 650 V Enhancement, 8-Pin HPSOF-8L NTBL075N065SC1
- RS Stock No.:
- 220-564
- Mfr. Part No.:
- NTBL075N065SC1
- Manufacturer:
- onsemi
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Tape(s) | Per Tape |
|---|---|
| 1 - 9 | HK$59.50 |
| 10 - 99 | HK$53.60 |
| 100 - 499 | HK$49.50 |
| 500 - 999 | HK$45.90 |
| 1000 + | HK$37.30 |
*price indicative
- RS Stock No.:
- 220-564
- Mfr. Part No.:
- NTBL075N065SC1
- Manufacturer:
- onsemi
Specifications
Product overview and Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | onsemi | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 37A | |
| Maximum Drain Source Voltage Vds | 650V | |
| Series | NTBL | |
| Package Type | HPSOF-8L | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 85mΩ | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | 4.4V | |
| Maximum Power Dissipation Pd | 139W | |
| Maximum Gate Source Voltage Vgs | 22.6 V | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 59nC | |
| Maximum Operating Temperature | 175°C | |
| Height | 2.3mm | |
| Length | 9.9mm | |
| Standards/Approvals | RoHS | |
| Width | 10.38 mm | |
| Select all | ||
|---|---|---|
Brand onsemi | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 37A | ||
Maximum Drain Source Voltage Vds 650V | ||
Series NTBL | ||
Package Type HPSOF-8L | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 85mΩ | ||
Channel Mode Enhancement | ||
Forward Voltage Vf 4.4V | ||
Maximum Power Dissipation Pd 139W | ||
Maximum Gate Source Voltage Vgs 22.6 V | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 59nC | ||
Maximum Operating Temperature 175°C | ||
Height 2.3mm | ||
Length 9.9mm | ||
Standards/Approvals RoHS | ||
Width 10.38 mm | ||
- COO (Country of Origin):
- PH
The ON Semiconductor Silicon Carbide (SiC) MOSFET uses a completely new technology that provide superior switching performance and higher reliability compared to Silicon. In addition, the low ON resistance and compact chip size ensure low capacitance and gate charge. Consequently, system benefits include highest efficiency, faster operation frequency, increased power density, reduced EMI, and reduced system size.
High Speed Switching with Low Capacitance
RoHS Compliant
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