onsemi EliteSiC Type N-Channel MOSFET, 77 A, 650 V N, 8-Pin HPSOF-8L NTBL023N065M3S
- RS Stock No.:
- 333-415
- Mfr. Part No.:
- NTBL023N065M3S
- Manufacturer:
- onsemi
The image is for reference only, please refer to product details and specifications
Bulk discount available
Subtotal (1 tape of 1 unit)*
HK$119.14
FREE delivery for orders over HK$250.00
In Stock
- 1,993 unit(s) ready to ship from another location
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Tape(s) | Per Tape |
|---|---|
| 1 - 9 | HK$119.14 |
| 10 - 99 | HK$107.18 |
| 100 + | HK$98.88 |
*price indicative
- RS Stock No.:
- 333-415
- Mfr. Part No.:
- NTBL023N065M3S
- Manufacturer:
- onsemi
Specifications
Product overview and Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | onsemi | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 77A | |
| Maximum Drain Source Voltage Vds | 650V | |
| Package Type | HPSOF-8L | |
| Series | EliteSiC | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 32.6mΩ | |
| Channel Mode | N | |
| Maximum Gate Source Voltage Vgs | 22 V | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 69nC | |
| Forward Voltage Vf | 6V | |
| Maximum Power Dissipation Pd | 312W | |
| Maximum Operating Temperature | 175°C | |
| Width | 10.38 mm | |
| Length | 9.9mm | |
| Standards/Approvals | Halide Free and RoHS with Exemption 7a, Pb-Free | |
| Height | 2.3mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand onsemi | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 77A | ||
Maximum Drain Source Voltage Vds 650V | ||
Package Type HPSOF-8L | ||
Series EliteSiC | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 32.6mΩ | ||
Channel Mode N | ||
Maximum Gate Source Voltage Vgs 22 V | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 69nC | ||
Forward Voltage Vf 6V | ||
Maximum Power Dissipation Pd 312W | ||
Maximum Operating Temperature 175°C | ||
Width 10.38 mm | ||
Length 9.9mm | ||
Standards/Approvals Halide Free and RoHS with Exemption 7a, Pb-Free | ||
Height 2.3mm | ||
Automotive Standard No | ||
- COO (Country of Origin):
- PH
The ON Semiconductor SiC MOSFET optimized for high-efficiency switching applications, offering low conduction losses and robust thermal performance. Its advanced design enhances reliability in demanding power systems while maintaining compact packaging. This device ensures efficient operation with minimal energy dissipation.
H PSOF8L package
RoHS compliant
Pb free
Related links
- onsemi EliteSiC Type N-Channel MOSFET 650 V N, 8-Pin HPSOF-8L NTBL032N065M3S
- onsemi NTBL Type N-Channel MOSFET 650 V Enhancement, 8-Pin HPSOF-8L NTBL075N065SC1
- onsemi NTBL Type N-Channel MOSFET 650 V Enhancement, 8-Pin HPSOF-8L NTBL060N065SC1
- onsemi NTB Type N-Channel MOSFET 1200 V Enhancement, 7-Pin HPSOF-8L NTBL045N065SC1
- onsemi EliteSiC Type N-Channel MOSFET 1700 V Enhancement, 4-Pin TO-247-4L NVH4L050N170M1
- onsemi NTB Type N-Channel MOSFET 1200 V Enhancement, 7-Pin HPSOF-8L
- Infineon CoolMOS C6 Type N-Channel MOSFET 650 V Enhancement, 3-Pin TO-247 IPW60R041C6FKSA1
- Infineon CoolMOS C6 Type N-Channel MOSFET 650 V Enhancement, 3-Pin TO-247
