STMicroelectronics SuperMESH N-Channel MOSFET, 85 A, 1 kV Enhancement, 3-Pin TO-252 STD2NK100Z

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Subtotal 100 units (supplied on a continuous strip)*

HK$1,699.00

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Units
Per unit
100 - 240HK$16.99
250 - 490HK$16.49
500 +HK$16.05

*price indicative

Packaging Options:
RS Stock No.:
151-902P
Mfr. Part No.:
STD2NK100Z
Manufacturer:
STMicroelectronics
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Brand

STMicroelectronics

Channel Type

N

Product Type

MOSFET

Maximum Continuous Drain Current Id

85A

Maximum Drain Source Voltage Vds

1kV

Package Type

TO-252

Series

SuperMESH

Mount Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance Rds

8.5Ω

Channel Mode

Enhancement

Maximum Gate Source Voltage Vgs

30V

Forward Voltage Vf

1.6V

Minimum Operating Temperature

-55°C

Typical Gate Charge Qg @ Vgs

16nC

Maximum Power Dissipation Pd

70W

Maximum Operating Temperature

159°C

Standards/Approvals

No

Automotive Standard

No

COO (Country of Origin):
CN
The STMicroelectronics Power MOSFET, it is high-voltage device with Zener-protected N-channel developed using the SuperMESH technology ,an optimization of the well-established PowerMESH. In addition to a significant reduction in on-resistance, this device is designed to ensure a high level of dv/dt capability for the most demanding applications.

Gate charge minimized

Very low intrinsic capacitance

Zener-protected

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