onsemi, Single Type N-Channel N-Channel Switch-Channel JFET, 0.2 V 8 mA, 3-Pin SOT-23
- RS Stock No.:
- 806-4251P
- Mfr. Part No.:
- MMBF4093
- Manufacturer:
- onsemi
The image is for reference only, please refer to product details and specifications
Bulk discount available
View bulk pricing optionsSubtotal 750 units (supplied on a reel)*
HK$2,124.00
FREE delivery for orders over HK$250.00
Last RS stock
- Final 400 unit(s), ready to ship from another location
Units | Per unit |
|---|---|
| 750 - 1450 | HK$2.832 |
| 1500 + | HK$2.788 |
*price indicative
- RS Stock No.:
- 806-4251P
- Mfr. Part No.:
- MMBF4093
- Manufacturer:
- onsemi
Specifications
Product overview and Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | onsemi | |
| Channel Type | Type N | |
| Product Type | JFET | |
| Sub Type | N-Channel Switch | |
| Maximum Drain Source Voltage Vds | 0.2V | |
| Configuration | Single | |
| Mount Type | Surface | |
| Package Type | SOT-23 | |
| Drain Source Current Ids | 8 mA | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 80Ω | |
| Maximum Power Dissipation Pd | 350mW | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 150°C | |
| Height | 0.93mm | |
| Standards/Approvals | No | |
| Length | 2.92mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand onsemi | ||
Channel Type Type N | ||
Product Type JFET | ||
Sub Type N-Channel Switch | ||
Maximum Drain Source Voltage Vds 0.2V | ||
Configuration Single | ||
Mount Type Surface | ||
Package Type SOT-23 | ||
Drain Source Current Ids 8 mA | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 80Ω | ||
Maximum Power Dissipation Pd 350mW | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 150°C | ||
Height 0.93mm | ||
Standards/Approvals No | ||
Length 2.92mm | ||
Automotive Standard No | ||
N-channel JFET, Fairchild Semiconductor
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A range of JFET (junction field-effect transistor) and HEMT/HFET (high-electron-mobility transistor/ hetero-junction FET) discrete semiconductor devices.