onsemi, Single Type P-Channel JFET-Channel JFET, 15 V -7 to -60 mA, 3-Pin SOT-23
- RS Stock No.:
- 163-0037
- Mfr. Part No.:
- MMBFJ175LT1G
- Manufacturer:
- onsemi
The image is for reference only, please refer to product details and specifications
Bulk discount available
Subtotal (1 reel of 3000 units)*
HK$2,301.00
Stock information currently inaccessible - Please check back later
Units | Per unit | Per Reel* |
|---|---|---|
| 3000 - 3000 | HK$0.767 | HK$2,301.00 |
| 6000 + | HK$0.751 | HK$2,253.00 |
*price indicative
- RS Stock No.:
- 163-0037
- Mfr. Part No.:
- MMBFJ175LT1G
- Manufacturer:
- onsemi
Specifications
Product overview and Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | onsemi | |
| Channel Type | Type P | |
| Sub Type | JFET | |
| Product Type | JFET | |
| Maximum Drain Source Voltage Vds | 15V | |
| Configuration | Single | |
| Mount Type | Surface | |
| Package Type | SOT-23 | |
| Minimum Operating Temperature | -55°C | |
| Drain Source Current Ids | -7 to -60 mA | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 125Ω | |
| Maximum Power Dissipation Pd | 225mW | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | No | |
| Length | 3.04mm | |
| Height | 1.01mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand onsemi | ||
Channel Type Type P | ||
Sub Type JFET | ||
Product Type JFET | ||
Maximum Drain Source Voltage Vds 15V | ||
Configuration Single | ||
Mount Type Surface | ||
Package Type SOT-23 | ||
Minimum Operating Temperature -55°C | ||
Drain Source Current Ids -7 to -60 mA | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 125Ω | ||
Maximum Power Dissipation Pd 225mW | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals No | ||
Length 3.04mm | ||
Height 1.01mm | ||
Automotive Standard No | ||
P-channel JFET, ON Semiconductor
JFET Transistors
A range of JFET (junction field-effect transistor) and HEMT/HFET (high-electron-mobility transistor/ hetero-junction FET) discrete semiconductor devices.
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