STMicroelectronics STGB18N40LZT4 IGBT, 30 A 420 V, 3-Pin D2PAK (TO-263), Surface Mount
- RS Stock No.:
- 810-3485P
- Mfr. Part No.:
- STGB18N40LZT4
- Manufacturer:
- STMicroelectronics
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Subtotal 5 units (supplied on a continuous strip)*
HK$101.80
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In Stock
- 1,320 unit(s) ready to ship from another location
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Units | Per unit |
|---|---|
| 5 + | HK$20.36 |
*price indicative
- RS Stock No.:
- 810-3485P
- Mfr. Part No.:
- STGB18N40LZT4
- Manufacturer:
- STMicroelectronics
Specifications
Product overview and Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | STMicroelectronics | |
| Maximum Continuous Collector Current | 30 A | |
| Maximum Collector Emitter Voltage | 420 V | |
| Maximum Gate Emitter Voltage | 16V | |
| Maximum Power Dissipation | 150 W | |
| Package Type | D2PAK (TO-263) | |
| Mounting Type | Surface Mount | |
| Channel Type | N | |
| Pin Count | 3 | |
| Switching Speed | 1MHz | |
| Transistor Configuration | Single | |
| Dimensions | 10.4 x 9.35 x 4.6mm | |
| Minimum Operating Temperature | -55 °C | |
| Maximum Operating Temperature | +175 °C | |
| Select all | ||
|---|---|---|
Brand STMicroelectronics | ||
Maximum Continuous Collector Current 30 A | ||
Maximum Collector Emitter Voltage 420 V | ||
Maximum Gate Emitter Voltage 16V | ||
Maximum Power Dissipation 150 W | ||
Package Type D2PAK (TO-263) | ||
Mounting Type Surface Mount | ||
Channel Type N | ||
Pin Count 3 | ||
Switching Speed 1MHz | ||
Transistor Configuration Single | ||
Dimensions 10.4 x 9.35 x 4.6mm | ||
Minimum Operating Temperature -55 °C | ||
Maximum Operating Temperature +175 °C | ||
IGBT Discretes, STMicroelectronics
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IGBT Discretes & Modules, STMicroelectronics
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.