Infineon BSC16DN25NS3GATMA1, N-Channel Single MOSFET, 10.9 A, 8-Pin PG-TDSON-8, Through Hole
- RS Stock No.:
- 273-5240
- Mfr. Part No.:
- BSC16DN25NS3GATMA1
- Manufacturer:
- Infineon
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- 30 unit(s) ready to ship from another location
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Units | Per unit | Per Pack* |
|---|---|---|
| 5 - 45 | HK$23.90 | HK$119.50 |
| 50 - 495 | HK$23.42 | HK$117.10 |
| 500 - 995 | HK$22.94 | HK$114.70 |
| 1000 - 2495 | HK$22.50 | HK$112.50 |
| 2500 + | HK$22.06 | HK$110.30 |
*price indicative
- RS Stock No.:
- 273-5240
- Mfr. Part No.:
- BSC16DN25NS3GATMA1
- Manufacturer:
- Infineon
Specifications
Product overview and Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Product Type | MOSFET | |
| Maximum Continuous Collector Current Ic | 10.9A | |
| Maximum Power Dissipation Pd | 62.5W | |
| Number of Transistors | 1 | |
| Configuration | Single | |
| Package Type | PG-TDSON-8 | |
| Mount Type | Through Hole | |
| Channel Type | N | |
| Pin Count | 8 | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Emitter Voltage VGEO | 20 V | |
| Maximum Operating Temperature | 150°C | |
| Width | 6.1mm | |
| Standards/Approvals | IEC 61249-2-21 | |
| Length | 5.1mm | |
| Height | 1.15mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Product Type MOSFET | ||
Maximum Continuous Collector Current Ic 10.9A | ||
Maximum Power Dissipation Pd 62.5W | ||
Number of Transistors 1 | ||
Configuration Single | ||
Package Type PG-TDSON-8 | ||
Mount Type Through Hole | ||
Channel Type N | ||
Pin Count 8 | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Emitter Voltage VGEO 20 V | ||
Maximum Operating Temperature 150°C | ||
Width 6.1mm | ||
Standards/Approvals IEC 61249-2-21 | ||
Length 5.1mm | ||
Height 1.15mm | ||
Automotive Standard No | ||
Infineon MOSFET, 62.5W Maximum Power Dissipation, 10.9A Maximum Continuous Collector Current - BSC16DN25NS3GATMA1
This single N-channel transistor is a through-hole power MOSFET designed for high thermal and current handling in industrial assemblies. It operates across a broad temperature span and is supplied in an 8-pin PG-TDSON package suitable for boards requiring a robust discrete switching device. The component is intended for applications where continuous current and power dissipation are primary concerns.
Features and Benefits:
• 62.5W maximum power dissipation provides sustained high-load handling
• 10.9A continuous collector current supports heavy-current switching
• N-channel channel type enables low-side switching configurations
• Through-hole mount type simplifies manual assembly and prototyping
• IEC 61249-2-21 compliance aids material and construction consistency
• 10.9A continuous collector current supports heavy-current switching
• N-channel channel type enables low-side switching configurations
• Through-hole mount type simplifies manual assembly and prototyping
• IEC 61249-2-21 compliance aids material and construction consistency
Applications
• Suitable for industrial power control modules requiring high dissipation
• Ideal for motor-driver circuits needing sustained continuous current
• Used for prototyping with through-hole assembly processes
• Can be used for thermal stress testing across wide temperatures
• Ideal for motor-driver circuits needing sustained continuous current
• Used for prototyping with through-hole assembly processes
• Can be used for thermal stress testing across wide temperatures
What temperature range can this device operate within?
It functions over a -55°C to 150°C operating window.
How many pins and what package does it use?
It is supplied in an 8-pin PG-TDSON package.
Is this component suitable for multi-transistor assemblies?
It is a single-transistor device intended for discrete placement in circuits.
What approvals relate to material or construction standards?
It meets the IEC 61249-2-21 standard.
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