Infineon BSC018NE2LSATMA1 IGBT, 153 A 25 V, 8-Pin PG-TDSON-8, Through Hole

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Subtotal (1 pack of 5 units)*

HK$583.40

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Units
Per unit
Per Pack*
5 - 45HK$116.68HK$583.40
50 - 495HK$113.18HK$565.90
500 - 995HK$110.92HK$554.60
1000 - 2495HK$108.70HK$543.50
2500 +HK$106.52HK$532.60

*price indicative

RS Stock No.:
273-5234
Mfr. Part No.:
BSC018NE2LSATMA1
Manufacturer:
Infineon
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Brand

Infineon

Maximum Continuous Collector Current

153 A

Maximum Collector Emitter Voltage

25 V

Maximum Gate Emitter Voltage

±20V

Maximum Power Dissipation

2.5 W

Package Type

PG-TDSON-8

Mounting Type

Through Hole

Channel Type

N

Pin Count

8

The Infineon MOSFET is a 25 V N channel MOSFET. It is optimized for high performance buck converter. This MOSFET is qualified according to JEDEC for target applications. This MOSFET is halogen free according to IEC61249 2 21 standard.

RoHS compliant
Pb free lead plating
Very low on resistance
Superior thermal resistance
100 percent avalanche tested

For these non-cancellable (NC), and non-returnable (NR) products, Terms and Conditions apply.


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