Infineon BSC018NE2LSATMA1, N-Channel MOSFET, 153 A 25 V, 8-Pin PG-TDSON-8, Through Hole
- RS Stock No.:
- 273-5234
- Mfr. Part No.:
- BSC018NE2LSATMA1
- Manufacturer:
- Infineon
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Units | Per unit | Per Pack* |
|---|---|---|
| 5 - 45 | HK$135.86 | HK$679.30 |
| 50 - 495 | HK$131.80 | HK$659.00 |
| 500 - 995 | HK$129.14 | HK$645.70 |
| 1000 - 2495 | HK$126.56 | HK$632.80 |
| 2500 + | HK$124.04 | HK$620.20 |
*price indicative
- RS Stock No.:
- 273-5234
- Mfr. Part No.:
- BSC018NE2LSATMA1
- Manufacturer:
- Infineon
Specifications
Product overview and Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Maximum Continuous Collector Current Ic | 153A | |
| Product Type | MOSFET | |
| Maximum Collector Emitter Voltage Vceo | 25V | |
| Number of Transistors | 1 | |
| Maximum Power Dissipation Pd | 69W | |
| Package Type | PG-TDSON-8 | |
| Mount Type | Through Hole | |
| Channel Type | N | |
| Pin Count | 8 | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Emitter Voltage VGEO | 20 V | |
| Maximum Operating Temperature | 150°C | |
| Length | 5.1mm | |
| Width | 6.1mm | |
| Height | 1.51mm | |
| Standards/Approvals | IEC61249-2-21 | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Maximum Continuous Collector Current Ic 153A | ||
Product Type MOSFET | ||
Maximum Collector Emitter Voltage Vceo 25V | ||
Number of Transistors 1 | ||
Maximum Power Dissipation Pd 69W | ||
Package Type PG-TDSON-8 | ||
Mount Type Through Hole | ||
Channel Type N | ||
Pin Count 8 | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Emitter Voltage VGEO 20 V | ||
Maximum Operating Temperature 150°C | ||
Length 5.1mm | ||
Width 6.1mm | ||
Height 1.51mm | ||
Standards/Approvals IEC61249-2-21 | ||
Automotive Standard No | ||
Infineon MOSFET, 69W Maximum Power Dissipation, 153A Maximum Continuous Collector Current - BSC018NE2LSATMA1
This MOSFET is a high-current semiconductor device designed for power switching in demanding electronic systems. It is a through-hole, 8-pin package suitable for applications that need substantial current handling and a wide operating temperature range. The component follows recognised material standards and is intended for use where robust thermal performance and high continuous current capacity are required.
Features and Benefits:
• 153A continuous current for high-load switching
• 69W power dissipation for sustained power handling
• N-channel topology enabling common high-side and low-side use
• Through-hole mounting for Durable mechanical retention
• IEC61249-2-21 compliance for standardised material properties
• 69W power dissipation for sustained power handling
• N-channel topology enabling common high-side and low-side use
• Through-hole mounting for Durable mechanical retention
• IEC61249-2-21 compliance for standardised material properties
Applications
• Suitable for power electronics requiring large current capacity
• Ideal for high-current motor drive stages
• Used with power converters needing robust dissipation
• Can be used for industrial switching assemblies
• Appropriate for thermally stressed control circuits
• Ideal for high-current motor drive stages
• Used with power converters needing robust dissipation
• Can be used for industrial switching assemblies
• Appropriate for thermally stressed control circuits
What temperature range can it operate within?
It functions across -55°C to 150°C operating limits.
How many pins and what package does it use?
It has 8 pins in a PG-TDSON-8 package.
Is it intended for automotive specification use?
It is not specified as meeting automotive standards.
What mounting method is recommended for secure installation?
Through-hole mounting is specified for mechanical stability.
Which transistor channel type does it employ?
It uses an N-channel configuration.
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