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Infineon FP100R12KT4BOSA1 IGBT Module, 100 A 1200 V

RS Stock No.:: 244-5379
Mfr. Part No.:: FP100R12KT4BOSA1
Manufacturer:: Infineon

Infineon FP100R12KT4BOSA1 IGBT Module, 100 A 1200 V

Bulk discount available

Subtotal (1 tray of 10 units)*

HK$9,170.60

FREE delivery for orders over HK$250.00

Temporarily out of stock

Shipping from 20 April 2026

Need more? Click ‘Check delivery dates’ to find extra stock and lead times.

Units	Per unit	Per Tray*
10 - 10	HK$917.06	HK$9,170.60
20 - 20	HK$898.72	HK$8,987.20
30 +	HK$880.75	HK$8,807.50

*price indicative

RS Stock No.:: 244-5379
Mfr. Part No.:: FP100R12KT4BOSA1
Manufacturer:: Infineon

Specifications

Product overview and Technical data sheets

Legislation and Compliance

Product Details

Find similar products by selecting one or more attributes.

Select all	Attribute	Value
	Brand	Infineon
	Maximum Continuous Collector Current	100 A
	Maximum Collector Emitter Voltage	1200 V
	Maximum Gate Emitter Voltage	+/-20V
	Number of Transistors	7
	Maximum Power Dissipation	515 W

	Select all
	Brand Infineon
	Maximum Continuous Collector Current 100 A
	Maximum Collector Emitter Voltage 1200 V
	Maximum Gate Emitter Voltage +/-20V
	Number of Transistors 7
	Maximum Power Dissipation 515 W

Datasheet - FP100R12KT4BOSA1

The infineon IGBT module the maximum rated repetitive peak collector current is 200 A and collector-emitter saturation voltag 2.20 V, gate threshold voltage is 6.4 V.

Collector-emitter cut-off current 1.0 mA
Temperature under switching conditions 150° C
Gate-emitter leakage current 100 nA
Reverse transfer capacitance 0.27 nF

Infineon FP100R12KT4BOSA1 IGBT Module, 100 A 1200 V

FREE delivery for orders over HK$250.00

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