Infineon FF600R12KE4BOSA1 Dual IGBT, 600 A 1200 V AG-62MM

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Subtotal (1 unit)*

HK$1,588.20

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Units
Per unit
1 - 9HK$1,588.20
10 - 99HK$1,556.50
100 - 249HK$1,525.40
250 - 499HK$1,494.80
500 +HK$1,464.90

*price indicative

Packaging Options:
RS Stock No.:
222-4794
Mfr. Part No.:
FF600R12KE4BOSA1
Manufacturer:
Infineon
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Brand

Infineon

Maximum Continuous Collector Current

600 A

Maximum Collector Emitter Voltage

1200 V

Maximum Gate Emitter Voltage

20V

Maximum Power Dissipation

1.2 kW

Configuration

Dual

Package Type

AG-62MM

Channel Type

N

Transistor Configuration

Common Emitter

The Infineon 62 mm 1200 V, 600 A dual IGBT module with TRENCHSTOP™ IGBT4 and emitter controlled diode. Also available as variation with common emitter:FF600R12KE4_E.

RoHS compliant
4 kV AC 1 min Insulation
Package with CTI > 400
High Creep age and Clearance Distances
UL/CSA Certification with UL1557 E83336

For these non-cancellable (NC), and non-returnable (NR) products, Terms and Conditions apply.


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