Infineon FF600R12KT4HOSA1 Dual IGBT Module, 600 A 1200 V AG-62MM

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Subtotal (1 tray of 10 units)*

HK$13,786.60

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Units
Per unit
Per Tray*
10 - 10HK$1,378.66HK$13,786.60
20 - 20HK$1,351.09HK$13,510.90
30 +HK$1,310.56HK$13,105.60

*price indicative

RS Stock No.:
233-3496
Mfr. Part No.:
FF600R12KT4HOSA1
Manufacturer:
Infineon
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Brand

Infineon

Maximum Continuous Collector Current

600 A

Maximum Collector Emitter Voltage

1200 V

Maximum Gate Emitter Voltage

±20V

Number of Transistors

2

Package Type

AG-62MM

Configuration

Dual

Channel Type

N

Transistor Configuration

Series

The Infineon dual fast trench IGBT module with TRENCHSTOP IGBT4 and Emitter Controlled 4 diode.

Highest power density
Flexibility
Optimal electrical performance
Highest reliability

For these non-cancellable (NC), and non-returnable (NR) products, Terms and Conditions apply.


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