STMicroelectronics STGWA20H65DFB2 IGBT, 40 A 650 V, 3-Pin TO-247

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Subtotal (1 pack of 5 units)*

HK$127.20

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Per Pack*
5 - 5HK$25.44HK$127.20
10 - 10HK$24.80HK$124.00
15 +HK$24.42HK$122.10

*price indicative

RS Stock No.:
206-7210
Mfr. Part No.:
STGWA20H65DFB2
Manufacturer:
STMicroelectronics
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Brand

STMicroelectronics

Maximum Continuous Collector Current

40 A

Maximum Collector Emitter Voltage

650 V

Maximum Gate Emitter Voltage

±20V

Maximum Power Dissipation

147 W

Number of Transistors

1

Package Type

TO-247

Pin Count

3

Transistor Configuration

Single

The STMicroelectronics Trench gate field-stop, 650 V, 20 A, high-speed HB2 series IGBT in a TO-247 long leads package.

Maximum junction temperature : TJ = 175 °C
Low VCE(sat) = 1.65 V (typ.) @ IC = 20 A
Very fast and soft recovery co-packaged diode
Minimized tail current
Tight parameter distribution
Low thermal resistance
Positive VCE(sat) temperature coefficient

For these non-cancellable (NC), and non-returnable (NR) products, Terms and Conditions apply.


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