STMicroelectronics STGWA20H65DFB2 IGBT, 40 A 650 V, 3-Pin TO-247

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Subtotal (1 tube of 30 units)*

HK$492.30

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  • 30 unit(s) shipping from 12 March 2026
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Units
Per unit
Per Tube*
30 - 30HK$16.41HK$492.30
60 - 90HK$16.053HK$481.59
120 +HK$15.697HK$470.91

*price indicative

RS Stock No.:
206-7209
Mfr. Part No.:
STGWA20H65DFB2
Manufacturer:
STMicroelectronics
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Brand

STMicroelectronics

Maximum Continuous Collector Current

40 A

Maximum Collector Emitter Voltage

650 V

Maximum Gate Emitter Voltage

±20V

Number of Transistors

1

Maximum Power Dissipation

147 W

Package Type

TO-247

Pin Count

3

Transistor Configuration

Single

The STMicroelectronics Trench gate field-stop, 650 V, 20 A, high-speed HB2 series IGBT in a TO-247 long leads package.

Maximum junction temperature : TJ = 175 °C
Low VCE(sat) = 1.65 V (typ.) @ IC = 20 A
Very fast and soft recovery co-packaged diode
Minimized tail current
Tight parameter distribution
Low thermal resistance
Positive VCE(sat) temperature coefficient

For these non-cancellable (NC), and non-returnable (NR) products, Terms and Conditions apply.


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