Infineon, Type N-Channel IGBT, 62 A 650 V, 3-Pin TO-247, Through Hole
- RS Stock No.:
- 144-1201
- Distrelec Article No.:
- 304-30-526
- Mfr. Part No.:
- IKW30N65ES5XKSA1
- Manufacturer:
- Infineon
The image is for reference only, please refer to product details and specifications
Bulk discount available
Subtotal (1 pack of 10 units)*
HK$169.50
FREE delivery for orders over HK$250.00
Temporarily out of stock
- Shipping from 24 July 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 10 - 10 | HK$16.95 | HK$169.50 |
| 20 - 20 | HK$16.65 | HK$166.50 |
| 30 + | HK$16.35 | HK$163.50 |
*price indicative
- RS Stock No.:
- 144-1201
- Distrelec Article No.:
- 304-30-526
- Mfr. Part No.:
- IKW30N65ES5XKSA1
- Manufacturer:
- Infineon
Specifications
Product overview and Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Maximum Continuous Collector Current Ic | 62A | |
| Product Type | IGBT | |
| Maximum Collector Emitter Voltage Vceo | 650V | |
| Maximum Power Dissipation Pd | 188W | |
| Package Type | TO-247 | |
| Mount Type | Through Hole | |
| Channel Type | Type N | |
| Pin Count | 3 | |
| Switching Speed | 30kHz | |
| Minimum Operating Temperature | -40°C | |
| Maximum Gate Emitter Voltage VGEO | ±30 V | |
| Maximum Collector Emitter Saturation Voltage VceSAT | 1.7V | |
| Maximum Operating Temperature | 175°C | |
| Series | TrenchStop | |
| Standards/Approvals | No | |
| Energy Rating | 0.88mJ | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Maximum Continuous Collector Current Ic 62A | ||
Product Type IGBT | ||
Maximum Collector Emitter Voltage Vceo 650V | ||
Maximum Power Dissipation Pd 188W | ||
Package Type TO-247 | ||
Mount Type Through Hole | ||
Channel Type Type N | ||
Pin Count 3 | ||
Switching Speed 30kHz | ||
Minimum Operating Temperature -40°C | ||
Maximum Gate Emitter Voltage VGEO ±30 V | ||
Maximum Collector Emitter Saturation Voltage VceSAT 1.7V | ||
Maximum Operating Temperature 175°C | ||
Series TrenchStop | ||
Standards/Approvals No | ||
Energy Rating 0.88mJ | ||
Automotive Standard No | ||
Infineon TrenchStop IGBT Transistors, 600 and 650V
A range of IGBT Transistors from Infineon with collector-emitter voltage ratings of 600 and 650V featuring TrenchStop™ technology. The range includes devices with an integrated high speed, fast recovery anti-parallel diode.
• Collector-emitter voltage range 600 to 650V
• Very low VCEsat
• Low turn-off losses
• Short tail current
• Low EMI
• Maximum junction temperature 175°C
IGBT Discretes & Modules, Infineon
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
Related links
- Infineon IKP39N65ES5XKSA1 Single IGBT 3-Pin PG-TO220
- Infineon IKW40N65H5FKSA1 IGBT 3-Pin TO-247, Through Hole
- Infineon IGW40N65F5FKSA1 IGBT 3-Pin TO-247, Through Hole
- Infineon IKW75N65EL5XKSA1 IGBT 3-Pin TO-247, Through Hole
- Infineon IKW50N65ES5XKSA1 IGBT 3-Pin TO-247, Through Hole
- Infineon IGW50N65H5FKSA1 IGBT 3-Pin TO-247, Through Hole
- Infineon IHW40N65R5XKSA1 IGBT 3-Pin TO-247, Through Hole
- Infineon IKW75N65ES5XKSA1 IGBT 3-Pin TO-247, Through Hole