Infineon IGW30N65L5XKSA1 IGBT, 85 A 650 V, 3-Pin PG-TO247-3

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Subtotal (1 tube of 30 units)*

HK$532.71

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Units
Per unit
Per Tube*
30 - 60HK$17.757HK$532.71
90 - 120HK$17.253HK$517.59
150 +HK$16.73HK$501.90

*price indicative

RS Stock No.:
215-6633
Mfr. Part No.:
IGW30N65L5XKSA1
Manufacturer:
Infineon
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Brand

Infineon

Maximum Continuous Collector Current

85 A

Maximum Collector Emitter Voltage

650 V

Maximum Gate Emitter Voltage

±20 V, ±30 V

Maximum Power Dissipation

227 W

Package Type

PG-TO247-3

Pin Count

3

The Infineon fifth generation insulated-gate bipolar transistor with low saturation voltage.

High Efficiency
Low Switching Losses
Increased Reliability
Low Electromagnetic Interference

For these non-cancellable (NC), and non-returnable (NR) products, Terms and Conditions apply.


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