IXYS MII75-12A3, Type N-Channel IGBT Module, 90 A 1200 V, 7-Pin Y4-M5, Surface

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HK$923.20

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1 - 1HK$923.20
2 - 2HK$907.00
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RS Stock No.:
193-880
Mfr. Part No.:
MII75-12A3
Manufacturer:
IXYS
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Brand

IXYS

Product Type

IGBT Module

Maximum Continuous Collector Current Ic

90A

Maximum Collector Emitter Voltage Vceo

1200V

Maximum Power Dissipation Pd

370W

Package Type

Y4-M5

Mount Type

Surface

Channel Type

Type N

Pin Count

7

Switching Speed

30kHz

Maximum Gate Emitter Voltage VGEO

20 V

Minimum Operating Temperature

-40°C

Maximum Collector Emitter Saturation Voltage VceSAT

2.7V

Maximum Operating Temperature

150°C

Length

94mm

Series

NPT

Standards/Approvals

No

Width

34 mm

Height

30mm

Automotive Standard

No

IGBT Modules, IXYS


IGBT Discretes & Modules, IXYS


The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.

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