Infineon 4 kB Serial-I2C (2 Wire) FRAM 8-Pin SOIC, FM24C04B-G
- RS Stock No.:
- 125-4207P
- Mfr. Part No.:
- FM24C04B-G
- Manufacturer:
- Infineon
The image is for reference only, please refer to product details and specifications
Currently unavailable
We don't know if this item will be back in stock, RS intend to remove it from our range soon.
- RS Stock No.:
- 125-4207P
- Mfr. Part No.:
- FM24C04B-G
- Manufacturer:
- Infineon
Specifications
Product overview and Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Memory Size | 4kB | |
| Product Type | FRAM | |
| Organisation | 512 x 8 bit | |
| Interface Type | Serial-I2C (2 Wire) | |
| Data Bus Width | 8bit | |
| Maximum Random Access Time | 3000ns | |
| Mount Type | Surface | |
| Package Type | SOIC | |
| Pin Count | 8 | |
| Width | 3.98mm | |
| Height | 1.48mm | |
| Length | 4.97mm | |
| Maximum Operating Temperature | 85°C | |
| Number of Words | 512 | |
| Minimum Operating Temperature | -40°C | |
| Number of Bits per Word | 8 | |
| Automotive Standard | AEC-Q100 | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Memory Size 4kB | ||
Product Type FRAM | ||
Organisation 512 x 8 bit | ||
Interface Type Serial-I2C (2 Wire) | ||
Data Bus Width 8bit | ||
Maximum Random Access Time 3000ns | ||
Mount Type Surface | ||
Package Type SOIC | ||
Pin Count 8 | ||
Width 3.98mm | ||
Height 1.48mm | ||
Length 4.97mm | ||
Maximum Operating Temperature 85°C | ||
Number of Words 512 | ||
Minimum Operating Temperature -40°C | ||
Number of Bits per Word 8 | ||
Automotive Standard AEC-Q100 | ||
FRAM, Cypress Semiconductor
Ferroelectric Random Access Memory (F-RAM) is energy-efficient and it has the highest-reliability of the non-volatile RAMs for both serial and parallel interfaces. Parts with suffix A are designed for automotive applications and are AEC-Q100 qualified.
Nonvolatile Ferroelectric RAM Memory
Fast write speed
High endurance
Low power consumption
FRAM (Ferroelectric RAM)
FRAM (Ferroelectric Random Access Memory) is a non-volatile memory that uses ferroelectric film as a capacitor for storing data. Possessing characteristics of both ROM and RAM devices, F-RAM features high-speed access, high endurance in write mode, low power consumption, non-volatility, and excellent tamper resistance. It is therefore Ideal memory for use in smart cards which need high security and low power consumption, as well as cellular phones and other devices.
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