Winbond SLC NAND 4 GB Parallel Flash Memory 63-Pin VFBGA, W29N04GVBIAF

RS Stock No.:: 188-2878P
Mfr. Part No.:: W29N04GVBIAF
Manufacturer:: Winbond

Winbond SLC NAND 4 GB Parallel Flash Memory 63-Pin VFBGA, W29N04GVBIAF

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Currently unavailable

We don’t know if this item will be back in stock, it is being discontinued by the manufacturer.

RS Stock No.:: 188-2878P
Mfr. Part No.:: W29N04GVBIAF
Manufacturer:: Winbond

Specifications

Product overview and Technical data sheets

Legislation and Compliance

Product Details

Find similar products by selecting one or more attributes.

Select all	Attribute	Value
	Brand	Winbond
	Product Type	Flash Memory
	Memory Size	4GB
	Interface Type	Parallel
	Package Type	VFBGA
	Pin Count	63
	Organisation	512M x 8 bit
	Mount Type	Surface
	Cell Type	SLC NAND
	Maximum Supply Voltage	3.6V
	Minimum Supply Voltage	2.7V
	Minimum Operating Temperature	-40°C
	Maximum Operating Temperature	85°C
	Width	11.1mm
	Height	600μm
	Standards/Approvals	No
	Length	11.1mm
	Maximum Random Access Time	25μs
	Number of Words	512M
	Supply Current	35mA
	Number of Bits per Word	8
	Automotive Standard	No
	Series	W29N04GV

	Select all
	Brand Winbond
	Product Type Flash Memory
	Memory Size 4GB
	Interface Type Parallel
	Package Type VFBGA
	Pin Count 63
	Organisation 512M x 8 bit
	Mount Type Surface
	Cell Type SLC NAND
	Maximum Supply Voltage 3.6V
	Minimum Supply Voltage 2.7V
	Minimum Operating Temperature -40°C
	Maximum Operating Temperature 85°C
	Width 11.1mm
	Height 600μm
	Standards/Approvals No
	Length 11.1mm
	Maximum Random Access Time 25μs
	Number of Words 512M
	Supply Current 35mA
	Number of Bits per Word 8
	Automotive Standard No
	Series W29N04GV

Datasheet W29N04GVBIAF

COO (Country of Origin):: TW

Density : 4Gbit (Single chip solution)

Vcc : 2.7V to 3.6V

Bus width : x8

Operating temperature

Industrial: -40°C to 85°C

Single-Level Cell (SLC) technology.

Organization

Density: 4G-bit/512M-byte

Page size

2,112 bytes (2048 + 64 bytes)

Block size

64 pages (128K + 4K bytes)

Highest Performance

Read performance (Max.)

Random read: 25us

Sequential read cycle: 25ns

Write Erase performance

Page program time: 250us(typ.)

Block erase time: 2ms(typ.)

Endurance 100,000 Erase/Program Cycles(1)

10-years data retention

Command set

Standard NAND command set

Additional command support

Sequential Cache Read

Random Cache Read

Cache Program

Copy Back

Two-plane operation

Contact Winbond for OTP feature

Contact Winbond for Block Lock feature

Lowest power consumption

Read: 25mA(typ.)

Program/Erase: 25mA(typ.)

CMOS standby: 10uA(typ.)

Space Efficient Packaging

48-pin standard TSOP1

63-ball VFBGA

4Gb SLC NAND Flash Memory with uniform 2KB+64B page size.

Bus Width: x8

Random Read: 25us

Page Program Time: 250us(typ.)

Block Erase Time: 2ms(typ.)

Support OTP Memory Area

Winbond SLC NAND 4 GB Parallel Flash Memory 63-Pin VFBGA, W29N04GVBIAF

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