Microchip Split Gate 1 MB Parallel Flash Memory 32-Pin TSOP
- RS Stock No.:
- 177-9813P
- Mfr. Part No.:
- SST39VF010-70-4I-WHE
- Manufacturer:
- Microchip
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Currently unavailable
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- RS Stock No.:
- 177-9813P
- Mfr. Part No.:
- SST39VF010-70-4I-WHE
- Manufacturer:
- Microchip
Specifications
Product overview and Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Microchip | |
| Product Type | Flash Memory | |
| Memory Size | 1MB | |
| Interface Type | Parallel | |
| Package Type | TSOP | |
| Pin Count | 32 | |
| Organisation | 128k x 8 | |
| Mount Type | Surface | |
| Cell Type | Split Gate | |
| Maximum Supply Voltage | 3.6V | |
| Minimum Supply Voltage | 2.7V | |
| Timing Type | Asynchronous | |
| Minimum Operating Temperature | -40°C | |
| Maximum Operating Temperature | 85°C | |
| Height | 1.05mm | |
| Width | 12.5mm | |
| Standards/Approvals | No | |
| Length | 8.1mm | |
| Automotive Standard | No | |
| Series | SST39 | |
| Maximum Random Access Time | 70ns | |
| Supply Current | 20mA | |
| Number of Bits per Word | 8 | |
| Number of Words | 128k | |
| Select all | ||
|---|---|---|
Brand Microchip | ||
Product Type Flash Memory | ||
Memory Size 1MB | ||
Interface Type Parallel | ||
Package Type TSOP | ||
Pin Count 32 | ||
Organisation 128k x 8 | ||
Mount Type Surface | ||
Cell Type Split Gate | ||
Maximum Supply Voltage 3.6V | ||
Minimum Supply Voltage 2.7V | ||
Timing Type Asynchronous | ||
Minimum Operating Temperature -40°C | ||
Maximum Operating Temperature 85°C | ||
Height 1.05mm | ||
Width 12.5mm | ||
Standards/Approvals No | ||
Length 8.1mm | ||
Automotive Standard No | ||
Series SST39 | ||
Maximum Random Access Time 70ns | ||
Supply Current 20mA | ||
Number of Bits per Word 8 | ||
Number of Words 128k | ||
- COO (Country of Origin):
- US
The SST39VF010 is a 128K x8CMOS Multi-Purpose Flash (MPF) manufactured with SST proprietary, high performance CMOS SuperFlash technology. The split-gate cell design and thick-oxide tunneling injector attain better reliability and manufacturability compared with alternate approaches. The SST39VF010 device writes (Program or Erase) with a 2.7-3.6V power supply.
Single Voltage Read and Write Operations
Superior Reliability
Low Power Consumption
Sector-Erase Capability
Fast Read Access Time
Latched Address and Data
Fast Erase and Byte-Program
Automatic Write Timing– Internal VPP Generation
End-of-Write Detection– Toggle Bit– Data# Polling
CMOS I/O Compatibility
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