STMicroelectronics M24256E-FDW6TP, 256kB EEPROM Memory Chip, 450ns 8-Pin TSSOP8 I2C
- RS Stock No.:
- 151-722P
- Mfr. Part No.:
- M24256E-FDW6TP
- Manufacturer:
- STMicroelectronics
Bulk discount available
Subtotal 200 units (supplied on a reel)*
HK$390.00
FREE delivery for orders over HK$250.00
In Stock
- Plus 3,760 unit(s) shipping from 08 December 2025
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Units | Per unit |
|---|---|
| 200 - 480 | HK$1.95 |
| 500 - 980 | HK$1.805 |
| 1000 - 1980 | HK$1.665 |
| 2000 + | HK$1.605 |
*price indicative
- RS Stock No.:
- 151-722P
- Mfr. Part No.:
- M24256E-FDW6TP
- Manufacturer:
- STMicroelectronics
Specifications
Product overview and Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | STMicroelectronics | |
| Memory Size | 256kB | |
| Interface Type | I2C | |
| Package Type | TSSOP8 | |
| Mounting Type | Surface Mount | |
| Pin Count | 8 | |
| Maximum Random Access Time | 450ns | |
| Select all | ||
|---|---|---|
Brand STMicroelectronics | ||
Memory Size 256kB | ||
Interface Type I2C | ||
Package Type TSSOP8 | ||
Mounting Type Surface Mount | ||
Pin Count 8 | ||
Maximum Random Access Time 450ns | ||
- COO (Country of Origin):
- CN
The STMicroelectronics M24256E-F is a 256-Kbit I2C-compatible EEPROM (electrically erasable programmable read only memory)organized as 32 K x 8 bits. It offers an additional page of 64 bytes, named identification page, which can be used to store sensitive application parameters which can be (later) permanently locked in read-only mode.
Random and sequential read modes
Write protection of the whole memory array
Configurable device address
Preprogrammed device address (on demand)
Enhanced ESD or latch-up protection
More than 4 million write cycles
More than 200-year data retention
Write protection of the whole memory array
Configurable device address
Preprogrammed device address (on demand)
Enhanced ESD or latch-up protection
More than 4 million write cycles
More than 200-year data retention