Intelligent Memory IME1G16D3EEBG-15EI SDRAM 1 GB Surface, 96-Pin 16 bit FBGA-96 Ball
- RS Stock No.:
- 588-643
- Mfr. Part No.:
- IME1G16D3EEBG-15EI
- Manufacturer:
- Intelligent Memory
Subtotal (1 unit)*
HK$68.90
Stock information currently inaccessible - Please check back later
Units | Per unit |
|---|---|
| 1 + | HK$68.90 |
*price indicative
- RS Stock No.:
- 588-643
- Mfr. Part No.:
- IME1G16D3EEBG-15EI
- Manufacturer:
- Intelligent Memory
Specifications
Product overview and Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Intelligent Memory | |
| Memory Size | 1GB | |
| Product Type | SDRAM | |
| Organisation | 8M x 16 | |
| Data Bus Width | 16bit | |
| Maximum Clock Frequency | 800MHz | |
| Number of Bits per Word | 72 | |
| Maximum Random Access Time | 1.25ns | |
| Number of Words | 16777216 | |
| Mount Type | Surface | |
| Package Type | FBGA-96 Ball | |
| Minimum Operating Temperature | -40°C | |
| Pin Count | 96 | |
| Maximum Operating Temperature | 95°C | |
| Length | 10.5mm | |
| Standards/Approvals | JEDEC, RoHS | |
| Series | IME1G(08/16)D3EEB | |
| Maximum Supply Voltage | 1.575V | |
| Automotive Standard | AEC-Q100 | |
| Minimum Supply Voltage | 1.425V | |
| Select all | ||
|---|---|---|
Brand Intelligent Memory | ||
Memory Size 1GB | ||
Product Type SDRAM | ||
Organisation 8M x 16 | ||
Data Bus Width 16bit | ||
Maximum Clock Frequency 800MHz | ||
Number of Bits per Word 72 | ||
Maximum Random Access Time 1.25ns | ||
Number of Words 16777216 | ||
Mount Type Surface | ||
Package Type FBGA-96 Ball | ||
Minimum Operating Temperature -40°C | ||
Pin Count 96 | ||
Maximum Operating Temperature 95°C | ||
Length 10.5mm | ||
Standards/Approvals JEDEC, RoHS | ||
Series IME1G(08/16)D3EEB | ||
Maximum Supply Voltage 1.575V | ||
Automotive Standard AEC-Q100 | ||
Minimum Supply Voltage 1.425V | ||
- COO (Country of Origin):
- TW
The Intelligent Memory Double Data Rate (DDR) DRAM offers higher module density, faster data transmission speeds, and lower voltage requirements compared to DDR3 devices. It also supports data masking per byte on write commands, enhancing data management and reliability.
Programmable burst length and CAS latency
Auto refresh and self refresh
Write leveling
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