Infineon 40 V 120 mA Diode SOT-323 BAT6406WH6327XTSA1
- RS Stock No.:
- 259-1403
- Mfr. Part No.:
- BAT6406WH6327XTSA1
- Manufacturer:
- Infineon
The image is for reference only, please refer to product details and specifications
Bulk discount available
View bulk pricing optionsSubtotal (1 pack of 25 units)*
HK$19.70
FREE delivery for orders over HK$250.00
In Stock
- 14,950 unit(s) ready to ship from another location
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 25 - 25 | HK$0.788 | HK$19.70 |
| 50 - 75 | HK$0.748 | HK$18.70 |
| 100 - 225 | HK$0.704 | HK$17.60 |
| 250 - 975 | HK$0.652 | HK$16.30 |
| 1000 + | HK$0.60 | HK$15.00 |
*price indicative
- RS Stock No.:
- 259-1403
- Mfr. Part No.:
- BAT6406WH6327XTSA1
- Manufacturer:
- Infineon
Specifications
Product overview and Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Product Type | Diode | |
| Mount Type | Surface | |
| Package Type | SOT-323 | |
| Maximum Continuous Forward Current If | 120mA | |
| Peak Reverse Repetitive Voltage Vrrm | 40V | |
| Series | BAT64-06W | |
| Diode Configuration | Common Anode | |
| Minimum Operating Temperature | -65°C | |
| Peak Reverse Current Ir | 2μA | |
| Peak Reverse Recovery Time trr | 5ns | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | AEC-Q101 | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Product Type Diode | ||
Mount Type Surface | ||
Package Type SOT-323 | ||
Maximum Continuous Forward Current If 120mA | ||
Peak Reverse Repetitive Voltage Vrrm 40V | ||
Series BAT64-06W | ||
Diode Configuration Common Anode | ||
Minimum Operating Temperature -65°C | ||
Peak Reverse Current Ir 2μA | ||
Peak Reverse Recovery Time trr 5ns | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals AEC-Q101 | ||
Automotive Standard No | ||
The Infineon Silicon Schottky diode is used for bias isolation and clamping application.
Integrated diffused guard ring
Low forward voltage
Related links
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