STMicroelectronics 1200 V 10 A Diode Schottky 3-Pin D2PAK STPSC10H12GY-TR
- RS Stock No.:
- 163-7347
- Mfr. Part No.:
- STPSC10H12GY-TR
- Manufacturer:
- STMicroelectronics
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HK$36,185.00
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Units | Per unit | Per Reel* |
|---|---|---|
| 1000 - 4000 | HK$36.185 | HK$36,185.00 |
| 5000 + | HK$35.461 | HK$35,461.00 |
*price indicative
- RS Stock No.:
- 163-7347
- Mfr. Part No.:
- STPSC10H12GY-TR
- Manufacturer:
- STMicroelectronics
Specifications
Product overview and Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | STMicroelectronics | |
| Mount Type | Surface | |
| Product Type | Diode | |
| Package Type | TO-263 | |
| Maximum Continuous Forward Current If | 10A | |
| Peak Reverse Repetitive Voltage Vrrm | 1200V | |
| Diode Configuration | Single | |
| Rectifier Type | Schottky | |
| Pin Count | 3 | |
| Peak Non-Repetitive Forward Surge Current Ifsm | 420A | |
| Minimum Operating Temperature | -40°C | |
| Peak Reverse Current Ir | 400μA | |
| Maximum Forward Voltage Vf | 2.25V | |
| Maximum Operating Temperature | 175°C | |
| Length | 10.4mm | |
| Standards/Approvals | No | |
| Width | 9.35mm | |
| Height | 4.6mm | |
| Automotive Standard | AEC-Q101, AEC-Q101 | |
| Select all | ||
|---|---|---|
Brand STMicroelectronics | ||
Mount Type Surface | ||
Product Type Diode | ||
Package Type TO-263 | ||
Maximum Continuous Forward Current If 10A | ||
Peak Reverse Repetitive Voltage Vrrm 1200V | ||
Diode Configuration Single | ||
Rectifier Type Schottky | ||
Pin Count 3 | ||
Peak Non-Repetitive Forward Surge Current Ifsm 420A | ||
Minimum Operating Temperature -40°C | ||
Peak Reverse Current Ir 400μA | ||
Maximum Forward Voltage Vf 2.25V | ||
Maximum Operating Temperature 175°C | ||
Length 10.4mm | ||
Standards/Approvals No | ||
Width 9.35mm | ||
Height 4.6mm | ||
Automotive Standard AEC-Q101, AEC-Q101 | ||
The SiC diode, available in TO-220AC and D²PAK, is an ultrahigh performance power Schottky rectifier. It is manufactured using a silicon carbide substrate. The wide band-gap material allows the design of a low VF Schottky diode structure with a 1200 V rating. Due to the Schottky construction, no recovery is shown at turn-off and ringing patterns are negligible. The minimal capacitive turn-off behaviour is independent of temperature. Especially suited for use in PFC and secondary side applications, this ST SiC diode will boost the performance in hard switching conditions. This rectifier will enhance the performance of the targeted application. Its high forward surge capability ensures a good robustness during transient phases
No or negligible reverse recovery
Switching behavior independent of temperature
Robust high voltage periphery
PPAP capable
Operating Temp. from -40 °C to 175 °C
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