DiodesZetex Full Bridge 4 Type N, Type P-Channel Power MOSFET, 1.8 A, 60 V Enhancement, 8-Pin

The image is for reference only, please refer to product details and specifications

Bulk discount available
View bulk pricing options

Subtotal (1 reel of 1000 units)*

HK$12,028.00

Add to Basket
Select or type quantity
In Stock
  • 1,000 unit(s) ready to ship from another location
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.

Units
Per unit
Per Reel*
1000 - 1000HK$12.028HK$12,028.00
2000 - 3000HK$11.667HK$11,667.00
4000 +HK$11.317HK$11,317.00

*price indicative

RS Stock No.:
922-7888
Mfr. Part No.:
ZXMHC6A07T8TA
Manufacturer:
DiodesZetex
Find similar products by selecting one or more attributes.
Select all

Brand

DiodesZetex

Channel Type

Type N, Type P

Product Type

Power MOSFET

Maximum Continuous Drain Current Id

1.8A

Maximum Drain Source Voltage Vds

60V

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

425mΩ

Channel Mode

Enhancement

Minimum Operating Temperature

150°C

Typical Gate Charge Qg @ Vgs

3.2nC

Forward Voltage Vf

0.85V

Maximum Power Dissipation Pd

1.7W

Maximum Operating Temperature

-55°C

Transistor Configuration

Full Bridge

Length

6.7mm

Height

1.6mm

Standards/Approvals

J-STD-020, RoHS, AEC-Q101, MIL-STD-202, UL 94V-0

Number of Elements per Chip

4

Automotive Standard

No

COO (Country of Origin):
DE

Complementary Enhancement Mode MOSFET H-Bridge, Diodes Inc.


MOSFET Transistors, Diodes Inc.


Related links

Be the first to know about our latest products and offers

Email address

The personal information you provide to us when signing up to this mailing list will be processed in line with the Privacy Policy