N-Channel MOSFET, 60 A, 60 V, 3-Pin TO-220 STMicroelectronics STP60NF06L
- RS Stock No.:
- 920-8809
- Mfr. Part No.:
- STP60NF06L
- Manufacturer:
- STMicroelectronics
Bulk discount available
Subtotal (1 tube of 50 units)**
HK$613.20
400 In stock for delivery within 3 working days*
* Delivery dates may change based on your chosen quantity and delivery address.
FREE delivery for orders over HK$850.00
Units | Per unit | Per Tube** |
|---|---|---|
| 50 - 50 | HK$12.264 | HK$613.20 |
| 100 - 150 | HK$11.998 | HK$599.90 |
| 200 + | HK$11.732 | HK$586.60 |
**price indicative
- RS Stock No.:
- 920-8809
- Mfr. Part No.:
- STP60NF06L
- Manufacturer:
- STMicroelectronics
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Manufacturer | STMicroelectronics | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 60 A | |
| Maximum Drain Source Voltage | 60 V | |
| Package Type | TO-220 | |
| Series | STripFET II | |
| Mounting Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance | 14 mΩ | |
| Channel Mode | Enhancement | |
| Minimum Gate Threshold Voltage | 1V | |
| Maximum Power Dissipation | 110 W | |
| Transistor Configuration | Single | |
| Maximum Gate Source Voltage | -15 V, +15 V | |
| Number of Elements per Chip | 1 | |
| Typical Gate Charge @ Vgs | 35 nC @ 4.5 V | |
| Length | 10.4mm | |
| Maximum Operating Temperature | +175 °C | |
| Transistor Material | Si | |
| Width | 4.6mm | |
| Height | 9.15mm | |
| Minimum Operating Temperature | -65 °C | |
Select all | ||
|---|---|---|
Manufacturer STMicroelectronics | ||
Channel Type N | ||
Maximum Continuous Drain Current 60 A | ||
Maximum Drain Source Voltage 60 V | ||
Package Type TO-220 | ||
Series STripFET II | ||
Mounting Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 14 mΩ | ||
Channel Mode Enhancement | ||
Minimum Gate Threshold Voltage 1V | ||
Maximum Power Dissipation 110 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -15 V, +15 V | ||
Number of Elements per Chip 1 | ||
Typical Gate Charge @ Vgs 35 nC @ 4.5 V | ||
Length 10.4mm | ||
Maximum Operating Temperature +175 °C | ||
Transistor Material Si | ||
Width 4.6mm | ||
Height 9.15mm | ||
Minimum Operating Temperature -65 °C | ||