Infineon HEXFET Type P-Channel MOSFET, 12 A, 55 V Enhancement, 3-Pin TO-220
- RS Stock No.:
- 919-4858
- Mfr. Part No.:
- IRF9Z24NPBF
- Manufacturer:
- Infineon
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HK$305.90
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In Stock
- 1,350 unit(s) ready to ship from another location
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Units | Per unit | Per Tube* |
|---|---|---|
| 50 - 50 | HK$6.118 | HK$305.90 |
| 100 - 150 | HK$5.988 | HK$299.40 |
| 200 + | HK$5.852 | HK$292.60 |
*price indicative
- RS Stock No.:
- 919-4858
- Mfr. Part No.:
- IRF9Z24NPBF
- Manufacturer:
- Infineon
Specifications
Product overview and Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type P | |
| Maximum Continuous Drain Current Id | 12A | |
| Maximum Drain Source Voltage Vds | 55V | |
| Package Type | TO-220 | |
| Series | HEXFET | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 175mΩ | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | -1.6V | |
| Maximum Gate Source Voltage Vgs | 20V | |
| Maximum Power Dissipation Pd | 45W | |
| Typical Gate Charge Qg @ Vgs | 19nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | No | |
| Width | 4.69mm | |
| Height | 8.77mm | |
| Length | 10.54mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Product Type MOSFET | ||
Channel Type Type P | ||
Maximum Continuous Drain Current Id 12A | ||
Maximum Drain Source Voltage Vds 55V | ||
Package Type TO-220 | ||
Series HEXFET | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 175mΩ | ||
Channel Mode Enhancement | ||
Forward Voltage Vf -1.6V | ||
Maximum Gate Source Voltage Vgs 20V | ||
Maximum Power Dissipation Pd 45W | ||
Typical Gate Charge Qg @ Vgs 19nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals No | ||
Width 4.69mm | ||
Height 8.77mm | ||
Length 10.54mm | ||
Automotive Standard No | ||
- COO (Country of Origin):
- CN
Infineon HEXFET Series MOSFET, 12A Maximum Continuous Drain Current, 45W Maximum Power Dissipation - IRF9Z24NPBF
This high-performance MOSFET is designed for efficient power management across various applications. With a P-channel configuration, it is well-suited for controlled switching and enhanced current flow. The product plays a crucial role in driving high-power loads, ensuring consistent performance and thermal stability under challenging conditions.
Features & Benefits
• Maximum continuous drain current of 12A
• Maximum drain-source voltage of 55V
• Low RDS(on) of 175mΩ for reduced power loss
• Works with both negative and positive gate-source voltage
Applications
• Used in power management systems for automation
• Employed in switch mode power supplies for electronics
• Beneficial in audio amplifiers for improved performance
• Common in various consumer electronics for efficient energy use
What is the typical gate charge for optimal performance?
The typical gate charge is 19nC at a gate-source voltage of 10V, providing effective switching characteristics.
How does the channel type affect functionality?
As a P-channel MOSFET, it allows for better integration in high-side switching applications, expanding potential usage scenarios in power circuits.
What is the significance of the temperature range?
The operating temperature range from -55°C to +175°C ensures reliability in various environments, making it versatile for different industrial applications.
Can it be used in high-frequency switching applications?
Yes, the combination of low gate charge and resistance makes it appropriate for high-frequency applications, enhancing performance efficiency.
What considerations should be given for installation?
Ensure proper thermal management and adequate mounting to facilitate effective heat dissipation, which can enhance longevity and reliability in operation.
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