Vishay ThunderFET Type N-Channel MOSFET, 11.1 A, 100 V Enhancement, 8-Pin SOIC
- RS Stock No.:
- 919-4227
- Mfr. Part No.:
- SI4056DY-T1-GE3
- Manufacturer:
- Vishay
The image is for reference only, please refer to product details and specifications
Bulk discount available
Subtotal (1 reel of 2500 units)*
HK$8,432.50
FREE delivery for orders over HK$250.00
In Stock
- 2,500 unit(s) ready to ship from another location
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Reel* |
|---|---|---|
| 2500 - 10000 | HK$3.373 | HK$8,432.50 |
| 12500 + | HK$3.272 | HK$8,180.00 |
*price indicative
- RS Stock No.:
- 919-4227
- Mfr. Part No.:
- SI4056DY-T1-GE3
- Manufacturer:
- Vishay
Specifications
Product overview and Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Vishay | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 11.1A | |
| Maximum Drain Source Voltage Vds | 100V | |
| Series | ThunderFET | |
| Package Type | SOIC | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 31mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 19.6nC | |
| Forward Voltage Vf | 1.1V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Power Dissipation Pd | 5.7W | |
| Maximum Operating Temperature | 150°C | |
| Height | 1.5mm | |
| Width | 4 mm | |
| Standards/Approvals | No | |
| Length | 5mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Vishay | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 11.1A | ||
Maximum Drain Source Voltage Vds 100V | ||
Series ThunderFET | ||
Package Type SOIC | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 31mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 19.6nC | ||
Forward Voltage Vf 1.1V | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Power Dissipation Pd 5.7W | ||
Maximum Operating Temperature 150°C | ||
Height 1.5mm | ||
Width 4 mm | ||
Standards/Approvals No | ||
Length 5mm | ||
Automotive Standard No | ||
- COO (Country of Origin):
- TW
N-Channel MOSFET, Medium Voltage/ThunderFET®, Vishay Semiconductor
MOSFET Transistors, Vishay Semiconductor
Related links
- Vishay ThunderFET Type N-Channel MOSFET 100 V Enhancement, 8-Pin SOIC SI4056DY-T1-GE3
- Vishay ThunderFET Type N-Channel MOSFET 100 V Enhancement, 8-Pin SOIC
- Vishay ThunderFET Type N-Channel MOSFET 100 V Enhancement, 8-Pin SOIC SI4090DY-T1-GE3
- Vishay ThunderFET Type N-Channel MOSFET 80 V Enhancement, 8-Pin PowerPAK 1212
- Vishay ThunderFET Type N-Channel MOSFET 80 V Enhancement, 8-Pin PowerPAK 1212 SIS468DN-T1-GE3
- Vishay ThunderFET Type N-Channel MOSFET 100 V Enhancement, 6-Pin SC-70
- Vishay ThunderFET Type N-Channel MOSFET 100 V Enhancement, 6-Pin SC-70 SIA416DJ-T1-GE3
- Vishay ThunderFET Type N-Channel MOSFET 100 V Enhancement, 3-Pin TO-220AB SUP70040E-GE3