Vishay IRF Type N-Channel MOSFET, 28 A, 100 V Enhancement, 3-Pin TO-220 IRF540PBF
- RS Stock No.:
- 919-0020
- Mfr. Part No.:
- IRF540PBF
- Manufacturer:
- Vishay
The image is for reference only, please refer to product details and specifications
Bulk discount available
View bulk pricing optionsSubtotal (1 tube of 50 units)*
HK$493.60
FREE delivery for orders over HK$250.00
In Stock
- 500 unit(s) ready to ship from another location
- Plus 1,000 unit(s) shipping from 22 September 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Tube* |
|---|---|---|
| 50 - 50 | HK$9.872 | HK$493.60 |
| 100 - 150 | HK$9.656 | HK$482.80 |
| 200 + | HK$9.444 | HK$472.20 |
*price indicative
- RS Stock No.:
- 919-0020
- Mfr. Part No.:
- IRF540PBF
- Manufacturer:
- Vishay
Specifications
Product overview and Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Vishay | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 28A | |
| Maximum Drain Source Voltage Vds | 100V | |
| Series | IRF | |
| Package Type | TO-220 | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 77mΩ | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | 2.5V | |
| Maximum Gate Source Voltage Vgs | 20V | |
| Typical Gate Charge Qg @ Vgs | 72nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 150W | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | No | |
| Height | 9.01mm | |
| Width | 4.7mm | |
| Length | 10.41mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Vishay | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 28A | ||
Maximum Drain Source Voltage Vds 100V | ||
Series IRF | ||
Package Type TO-220 | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 77mΩ | ||
Channel Mode Enhancement | ||
Forward Voltage Vf 2.5V | ||
Maximum Gate Source Voltage Vgs 20V | ||
Typical Gate Charge Qg @ Vgs 72nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 150W | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals No | ||
Height 9.01mm | ||
Width 4.7mm | ||
Length 10.41mm | ||
Automotive Standard No | ||
N-Channel MOSFET, 100V to 150V, Vishay Semiconductor
MOSFET Transistors, Vishay Semiconductor
Related links
- Vishay IRF Type N-Channel MOSFET 100 V Enhancement, 3-Pin TO-220 IRF540PBF
- Vishay IRF Type N-Channel MOSFET 200 V Enhancement, 3-Pin TO-220 IRF610PBF
- Vishay IRF Type N-Channel MOSFET 500 V Enhancement, 3-Pin TO-220 IRF820APBF
- Vishay IRF Type N-Channel MOSFET 100 V Enhancement, 3-Pin TO-220 IRF530PBF
- Vishay IRF Type N-Channel MOSFET 100 V Enhancement, 3-Pin TO-263 IRF510SPBF
- Vishay IRF Type N-Channel MOSFET 250 V Enhancement, 3-Pin TO-263 IRF644SPBF
- Vishay IRF Type N-Channel Power MOSFET 400 V Enhancement, 3-Pin TO-220AB IRF720PBF
- Vishay IRF540S Type N-Channel MOSFET 100 V Enhancement, 3-Pin TO-263 IRF540SPBF