Infineon Single LogicFET 1 N-Channel MOSFET, 104 A, 55 V Enhancement, 3-Pin TO-220AB IRL2505PBF

RS Stock No.:: 913-3869
Mfr. Part No.:: IRL2505PBF
Manufacturer:: Infineon

Infineon Single LogicFET 1 N-Channel MOSFET, 104 A, 55 V Enhancement, 3-Pin TO-220AB IRL2505PBF

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We don't know if this item will be back in stock, RS intend to remove it from our range soon.

RS Stock No.:: 913-3869
Mfr. Part No.:: IRL2505PBF
Manufacturer:: Infineon

Specifications

Product overview and Technical data sheets

Legislation and Compliance

Product Details

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Select all	Attribute	Value
	Brand	Infineon
	Transistor Configuration	Single
	Series	LogicFET
	Number of Elements per Chip	1
	Channel Type	N
	Product Type	MOSFET
	Maximum Continuous Drain Current (Id)	104 A
	Maximum Drain Source Voltage (Vds)	55 V
	Channel Mode	Enhancement
	Pin Count	3
	Package Type	TO-220AB
	Automotive Standard	No
	Forward Voltage (Vf)	1.3 V
	Height	8.77 mm
	Length	10.54 mm
	Maximum Drain Source Resistance (Rds)	8 mΩ
	Maximum Gate Source Voltage (Vgs)	-16 V, +16 V
	Maximum Operating Temperature	175 °C
	Maximum Power Dissipation (Pd)	200 W
	Minimum Operating Temperature	-55 °C
	Mount Type	Through Hole, Through Hole
	Standards/Approvals	No
	Typical Gate Charge (Qg) @ Vgs	130 nC
	Width	4.69 mm

	Select all
	Brand Infineon
	Transistor Configuration Single
	Series LogicFET
	Number of Elements per Chip 1
	Channel Type N
	Product Type MOSFET
	Maximum Continuous Drain Current (Id) 104 A
	Maximum Drain Source Voltage (Vds) 55 V
	Channel Mode Enhancement
	Pin Count 3
	Package Type TO-220AB
	Automotive Standard No
	Forward Voltage (Vf) 1.3 V
	Height 8.77 mm
	Length 10.54 mm
	Maximum Drain Source Resistance (Rds) 8 mΩ
	Maximum Gate Source Voltage (Vgs) -16 V, +16 V
	Maximum Operating Temperature 175 °C
	Maximum Power Dissipation (Pd) 200 W
	Minimum Operating Temperature -55 °C
	Mount Type Through Hole, Through Hole
	Standards/Approvals No
	Typical Gate Charge (Qg) @ Vgs 130 nC
	Width 4.69 mm

COO (Country of Origin):: CN

Infineon LogicFET Series MOSFET, 104A Maximum Continuous Drain Current, 200W Maximum Power Dissipation - IRL2505PBF

This MOSFET is designed for high-performance applications that require efficient energy management. With a maximum continuous drain current of 104A and a drain-source voltage capability of up to 55V, it is a competitive option for the market. Its robust construction and Advanced specifications make it suitable for various automation and electronic applications.

Features & Benefits

• Low on-resistance of 8mΩ reduces heat generation

• Maximum power dissipation of 200 W enhances performance

• Through-hole mounting style allows for easier integration

• Low gate charge requirement improves operational efficiency

• Enhancement mode design ensures performance in challenging conditions

Applications

• Power switching for effective control

• Motor driving circuits for speed and torque regulation

• Automated systems requiring high current management

• Power supplies and conversion circuits to maintain stable output

• Industrial machinery for enhanced power handling

What is the gate threshold voltage for use?

The gate threshold voltage is between 1V and 2V, providing flexibility for various applications.

How does temperature affect performance?

This device can operate effectively within a temperature range of -55°C to +175°C, making it suitable for harsh environmental conditions.

Can it handle pulsed current operations?

Yes, it can manage pulsed drain currents up to 360A, ensuring reliability during short-duration applications.

What level of voltage can be managed across the drain-source?

It supports a maximum voltage of 55V, which is Ideal for most general-purpose applications.

Is specific handling required during installation?

Standard precautions should be observed, such as avoiding excessive heat during soldering and maintaining a suitable operating environment to ensure longevity.