Infineon OptiMOS 3 Type N-Channel MOSFET, 34 A, 200 V Enhancement, 3-Pin TO-263
- RS Stock No.:
- 911-4868
- Mfr. Part No.:
- IPB320N20N3GATMA1
- Manufacturer:
- Infineon
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Units | Per unit | Per Reel* |
|---|---|---|
| 1000 - 4000 | HK$12.452 | HK$12,452.00 |
| 5000 + | HK$12.203 | HK$12,203.00 |
*price indicative
- RS Stock No.:
- 911-4868
- Mfr. Part No.:
- IPB320N20N3GATMA1
- Manufacturer:
- Infineon
Specifications
Product overview and Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 34A | |
| Maximum Drain Source Voltage Vds | 200V | |
| Series | OptiMOS 3 | |
| Package Type | TO-263 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 32mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 22nC | |
| Forward Voltage Vf | 1.2V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 136W | |
| Maximum Operating Temperature | 175°C | |
| Length | 10.31mm | |
| Standards/Approvals | No | |
| Height | 4.57mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 34A | ||
Maximum Drain Source Voltage Vds 200V | ||
Series OptiMOS 3 | ||
Package Type TO-263 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 32mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 22nC | ||
Forward Voltage Vf 1.2V | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 136W | ||
Maximum Operating Temperature 175°C | ||
Length 10.31mm | ||
Standards/Approvals No | ||
Height 4.57mm | ||
Automotive Standard No | ||
- COO (Country of Origin):
- DE
Infineon OptiMOS 3 Series MOSFET, 200V Maximum Drain Source Voltage, 34A Maximum Continuous Drain Current - IPB320N20N3GATMA1
This MOSFET is a power semiconductor device designed for switching and amplification tasks in demanding electronic systems. It operates as an enhanced N-channel transistor and is intended for surface-mounted assemblies where robust power handling and gate control are required. The device combines moderate forward voltage characteristics with a gate charge profile suited to applications requiring precise drive control across a wide ambient temperature range.
Features and Benefits:
• 200V drain rating supports high-voltage switching applications
• 34A continuous current enables substantial load handling
• 32mΩ low Rds(on) reduces conduction losses during operation
• 136W maximum dissipation handles elevated power scenarios
• 22nC typical gate charge allows efficient gate-drive timing
• ±20V gate tolerance improves resilience to gate excursions
• 34A continuous current enables substantial load handling
• 32mΩ low Rds(on) reduces conduction losses during operation
• 136W maximum dissipation handles elevated power scenarios
• 22nC typical gate charge allows efficient gate-drive timing
• ±20V gate tolerance improves resilience to gate excursions
Applications
• Suitable for high-voltage DC-DC converters
• Ideal for motor-drive inverter stages
• Used with power supplies in industrial automation
• Can be used for switch-mode power amplifiers
• Suitable for high-power lighting control systems
• Ideal for motor-drive inverter stages
• Used with power supplies in industrial automation
• Can be used for switch-mode power amplifiers
• Suitable for high-power lighting control systems
What package style does it use and why does that matter?
It is supplied in a TO-263 package which offers a compact, low-profile form for surface mounting while providing a robust thermal path for heat removal in high-dissipation circuits.
What temperature extremes can it withstand during operation?
The device is specified to operate from -55°C up to 175°C, enabling use in environments with severe cold or elevated thermal stress without derating below those limits.
How does the forward voltage affect circuit design?
With a forward Vf of 1.2V, designers can predict conduction drop and power loss at given currents, aiding thermal management and selection of heatsinking or PCB copper for adequate dissipation.
What gate handling considerations are there for driving the device?
The typical gate charge of 22nC and maximum gate-source voltage of 20V dictate the required gate-driver strength and protection schemes to achieve desired switching speed while avoiding gate overvoltage.
Related links
- Infineon OptiMOS 3 Type N-Channel MOSFET 200 V Enhancement, 3-Pin TO-263 IPB320N20N3GATMA1
- Infineon OptiMOS 3 Type N-Channel MOSFET 200 V Enhancement, 3-Pin TO-220
- Infineon OptiMOS 3 Type N-Channel MOSFET 200 V Enhancement, 3-Pin TO-220 IPP320N20N3GXKSA1
- Infineon OptiMOS 3 Type N-Channel MOSFET 100 V Enhancement, 3-Pin TO-263
- Infineon OptiMOS 3 Type N-Channel MOSFET 150 V Enhancement, 3-Pin TO-263
- Infineon OptiMOS 3 Type N-Channel MOSFET 60 V Enhancement, 3-Pin TO-263
- Infineon OptiMOS 3 Type N-Channel MOSFET 250 V Enhancement, 3-Pin TO-263
- Infineon OptiMOS 3 Type N-Channel MOSFET 60 V Enhancement, 3-Pin TO-263