N-Channel MOSFET, 33 A, 600 V, 3-Pin TO-247AC Vishay SiHG33N60EF-GE3

RS Stock No.:: 903-4484
Mfr. Part No.:: SiHG33N60EF-GE3
Manufacturer:: Vishay

N-Channel MOSFET, 33 A, 600 V, 3-Pin TO-247AC Vishay SiHG33N60EF-GE3

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Price Each**

HK$50.70

On back order for despatch 09/05/2025, delivery within 3 working days*

* Delivery dates may change based on your chosen quantity and delivery address.

FREE delivery for orders over HK$850.00

Units	Per unit
1 - 12	HK$50.70
13 - 24	HK$49.40
25 +	HK$48.70

**price indicative

RS Stock No.:: 903-4484
Mfr. Part No.:: SiHG33N60EF-GE3
Manufacturer:: Vishay

SiHG33N60EF, EF Series Power MOSFET with Fast Body Diode
ESD Control Selection Guide V1

Attribute	Value
Channel Type	N
Maximum Continuous Drain Current	33 A
Maximum Drain Source Voltage	600 V
Package Type	TO-247AC
Series	EF Series
Mounting Type	Through Hole
Pin Count	3
Maximum Drain Source Resistance	98 mΩ
Channel Mode	Enhancement
Minimum Gate Threshold Voltage	2V
Maximum Power Dissipation	278 W
Transistor Configuration	Single
Maximum Gate Source Voltage	-30 V, +30 V
Maximum Operating Temperature	+150 °C
Length	15.87mm
Width	5.31mm
Transistor Material	Si
Typical Gate Charge @ Vgs	103 nC @ 10 V
Number of Elements per Chip	1
Minimum Operating Temperature	-55 °C
Height	20.82mm
Forward Diode Voltage	1.2V

N-Channel MOSFET, 33 A, 600 V, 3-Pin TO-247AC Vishay SiHG33N60EF-GE3

FREE delivery for orders over HK$850.00

N-Channel MOSFET with Fast Diode, EF Series, Vishay Semiconductor