Infineon CoolMOS CP Type N-Channel MOSFET, 17 A, 550 V Enhancement, 3-Pin TO-220 IPA50R199CPXKSA1
- RS Stock No.:
- 897-7453
- Mfr. Part No.:
- IPA50R199CPXKSA1
- Manufacturer:
- Infineon
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HK$121.90
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Units | Per unit | Per Pack* |
|---|---|---|
| 4 - 8 | HK$30.475 | HK$121.90 |
| 12 - 20 | HK$29.70 | HK$118.80 |
| 24 + | HK$29.275 | HK$117.10 |
*price indicative
- RS Stock No.:
- 897-7453
- Mfr. Part No.:
- IPA50R199CPXKSA1
- Manufacturer:
- Infineon
Specifications
Product overview and Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 17A | |
| Maximum Drain Source Voltage Vds | 550V | |
| Series | CoolMOS CP | |
| Package Type | TO-220 | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 199mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 34nC | |
| Maximum Power Dissipation Pd | 139W | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | 1.2V | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | No | |
| Length | 10.65mm | |
| Height | 16.15mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 17A | ||
Maximum Drain Source Voltage Vds 550V | ||
Series CoolMOS CP | ||
Package Type TO-220 | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 199mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 34nC | ||
Maximum Power Dissipation Pd 139W | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf 1.2V | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals No | ||
Length 10.65mm | ||
Height 16.15mm | ||
Automotive Standard No | ||
Infineon CoolMOS CP Series MOSFET, 17A Maximum Continuous Drain Current, 139W Maximum Power Dissipation - IPA50R199CPXKSA1
This MOSFET is a high-performance component suitable for various applications in the automation, electronics, and electrical sectors. It addresses the need for efficient power management and control, thereby enhancing overall system performance. With features such as high continuous drain current capacity and substantial voltage handling, it is an important choice for Advanced electronic designs.
Features & Benefits
• Maximum continuous drain current of 17A for robust power delivery
• Maximum drain-source voltage of 550V for diverse applications
• Low Rds(on) at 199mΩ for enhanced efficiency
• Enhancement mode design for improved switching characteristics
• TO-220 FP package for straightforward installation
• High power dissipation of 139W suitable for challenging environments
Applications
• High power converters to improve energy efficiency
• Motor control that require high current
• Industrial automation systems for increased reliability
• Switch-mode power supplies that need efficient components
What are the thermal limits for usage?
The product operates between -55°C and +150°C, providing versatility for various environments.
How does the gate threshold voltage impact performance?
The gate threshold voltage varies from 2.5V to 3.5V, optimising switching performance according to circuit conditions.
What packaging options are available for this component?
It comes in a TO-220 FP package, facilitating through-hole mounting for easy integration into circuits.
Is the component suitable for high-frequency applications?
Yes, it typically operates with a gate charge of 34nC at 10V, allowing it to function efficiently in high-frequency applications.
How do I ensure proper installation?
Refer to the datasheet recommendations for mounting and connections to achieve optimal performance and safety during use.
Related links
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