N-Channel MOSFET, 9.7 A, 600 V, 3-Pin DPAK Toshiba TK10P60W,RVQ(S

RS Stock No.:: 896-2640
Mfr. Part No.:: TK10P60W,RVQ(S
Manufacturer:: Toshiba

N-Channel MOSFET, 9.7 A, 600 V, 3-Pin DPAK Toshiba TK10P60W,RVQ(S

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Units	Per unit	Per Pack**
5 - 20	HK$10.80	HK$54.00
25 - 120	HK$10.62	HK$53.10
125 - 245	HK$10.36	HK$51.80
250 - 495	HK$10.10	HK$50.50
500 +	HK$9.84	HK$49.20

**price indicative

RS Stock No.:: 896-2640
Mfr. Part No.:: TK10P60W,RVQ(S
Manufacturer:: Toshiba

TK10P60W, Silicon N-Channel DTMOS MOSFET
ESD Control Selection Guide V1

Attribute	Value
Channel Type	N
Maximum Continuous Drain Current	9.7 A
Maximum Drain Source Voltage	600 V
Series	TK
Package Type	DPAK (TO-252)
Mounting Type	Surface Mount
Pin Count	3
Maximum Drain Source Resistance	430 mΩ
Channel Mode	Enhancement
Maximum Gate Threshold Voltage	3.7V
Maximum Power Dissipation	80 W
Transistor Configuration	Single
Maximum Gate Source Voltage	-30 V, +30 V
Number of Elements per Chip	1
Transistor Material	Si
Maximum Operating Temperature	+150 °C
Length	6.6mm
Typical Gate Charge @ Vgs	20 nC @ 10 V
Width	7.18mm
Height	2.3mm