onsemi Single SuperFET II 1 N-Channel MOSFET, 4.5 A, 600 V Enhancement, 3-Pin IPAK (TO-251) FCU900N60Z
- RS Stock No.:
- 864-4992
- Mfr. Part No.:
- FCU900N60Z
- Manufacturer:
- onsemi
The image is for reference only, please refer to product details and specifications
Bulk discount available
View bulk pricing optionsSubtotal (1 tube of 75 units)*
HK$620.10
FREE delivery for orders over HK$250.00
Being discontinued
- Final 225 unit(s), ready to ship from another location
Units | Per unit | Per Tube* |
|---|---|---|
| 75 - 300 | HK$8.268 | HK$620.10 |
| 375 - 675 | HK$8.104 | HK$607.80 |
| 750 + | HK$7.945 | HK$595.88 |
*price indicative
- RS Stock No.:
- 864-4992
- Mfr. Part No.:
- FCU900N60Z
- Manufacturer:
- onsemi
Specifications
Product overview and Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | onsemi | |
| Channel Type | N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 4.5A | |
| Maximum Drain Source Voltage Vds | 600V | |
| Series | SuperFET II | |
| Package Type | IPAK (TO-251) | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 900mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Source Voltage Vgs | -30, +30V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 52W | |
| Transistor Configuration | Single | |
| Maximum Operating Temperature | 150°C | |
| Width | 2.5mm | |
| Height | 6.3mm | |
| Length | 6.8mm | |
| Number of Elements per Chip | 1 | |
| Select all | ||
|---|---|---|
Brand onsemi | ||
Channel Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 4.5A | ||
Maximum Drain Source Voltage Vds 600V | ||
Series SuperFET II | ||
Package Type IPAK (TO-251) | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 900mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Source Voltage Vgs -30, +30V | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 52W | ||
Transistor Configuration Single | ||
Maximum Operating Temperature 150°C | ||
Width 2.5mm | ||
Height 6.3mm | ||
Length 6.8mm | ||
Number of Elements per Chip 1 | ||
SuperFET® and SuperFET® II N-Channel MOSFET, Fairchild Semiconductor
Fairchild added the SuperFET® II high-voltage power MOSFET family using the Super Junction Technology. It provides best-in-class robust body diode performance in AC-DC Switch Mode Power Supplies (SMPS) applications such as servers, telecom, computing, industrial power supply, UPS/ESS, solar inverter, lighting applications, which require high power density, system efficiency and reliability.
Utilizing an advanced charge balance technology, designers achieve more efficient, cost-effective and high performance solutions that take up less board space and improve reliability.
MOSFET Transistors, ON Semi
ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.
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