Toshiba TK Type N-Channel MOSFET, 72 A, 120 V Enhancement, 3-Pin TO-220 TK72E12N1,S1X(S
- RS Stock No.:
- 827-6277
- Mfr. Part No.:
- TK72E12N1,S1X(S
- Manufacturer:
- Toshiba
The image is for reference only, please refer to product details and specifications
Bulk discount available
Subtotal (1 pack of 5 units)*
HK$111.30
Add 15 units to get free delivery
Temporarily out of stock
- Shipping from 21 July 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 5 - 20 | HK$22.26 | HK$111.30 |
| 25 - 45 | HK$21.70 | HK$108.50 |
| 50 - 120 | HK$21.16 | HK$105.80 |
| 125 - 245 | HK$20.64 | HK$103.20 |
| 250 + | HK$20.12 | HK$100.60 |
*price indicative
- RS Stock No.:
- 827-6277
- Mfr. Part No.:
- TK72E12N1,S1X(S
- Manufacturer:
- Toshiba
Specifications
Product overview and Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Toshiba | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 72A | |
| Maximum Drain Source Voltage Vds | 120V | |
| Package Type | TO-220 | |
| Series | TK | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 4.4mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Power Dissipation Pd | 225W | |
| Forward Voltage Vf | -1.2V | |
| Typical Gate Charge Qg @ Vgs | 130nC | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | No | |
| Height | 15.1mm | |
| Width | 4.45 mm | |
| Length | 10.16mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Toshiba | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 72A | ||
Maximum Drain Source Voltage Vds 120V | ||
Package Type TO-220 | ||
Series TK | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 4.4mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Power Dissipation Pd 225W | ||
Forward Voltage Vf -1.2V | ||
Typical Gate Charge Qg @ Vgs 130nC | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals No | ||
Height 15.1mm | ||
Width 4.45 mm | ||
Length 10.16mm | ||
Automotive Standard No | ||
- COO (Country of Origin):
- CN
MOSFET N-Channel, TK6 & TK7 Series, Toshiba
MOSFET Transistors, Toshiba
Related links
- Toshiba TK Type N-Channel MOSFET 120 V Enhancement, 3-Pin TO-220
- Toshiba TK Type N-Channel MOSFET 120 V EnhancementS1X(S
- Toshiba TK Type N-Channel MOSFET 120 V EnhancementS4X(S
- Toshiba TK Type N-Channel MOSFET 120 V Enhancement, 3-Pin TO-220
- Toshiba TK Type N-Channel MOSFET 120 V EnhancementS1X(S
- Toshiba TK Type N-Channel MOSFET 80 V EnhancementS4X(S
- Toshiba TK Type N-Channel MOSFET 100 V Enhancement, 3-Pin TO-220
- Toshiba TK Type N-Channel MOSFET 100 V EnhancementS1X(S