Toshiba TK Type N-Channel MOSFET, 20 A, 600 V Enhancement, 3-Pin TO-247 TK20N60W,S1VF(S
- RS Stock No.:
- 827-6167
- Mfr. Part No.:
- TK20N60W,S1VF(S
- Manufacturer:
- Toshiba
The image is for reference only, please refer to product details and specifications
Bulk discount available
Subtotal (1 pack of 2 units)*
HK$64.00
FREE delivery for orders over HK$250.00
Temporarily out of stock
- 2 unit(s) shipping from 30 January 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 2 - 18 | HK$32.00 | HK$64.00 |
| 20 - 38 | HK$31.20 | HK$62.40 |
| 40 - 72 | HK$30.40 | HK$60.80 |
| 74 - 148 | HK$29.65 | HK$59.30 |
| 150 + | HK$28.90 | HK$57.80 |
*price indicative
- RS Stock No.:
- 827-6167
- Mfr. Part No.:
- TK20N60W,S1VF(S
- Manufacturer:
- Toshiba
Specifications
Product overview and Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Toshiba | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 20A | |
| Maximum Drain Source Voltage Vds | 600V | |
| Series | TK | |
| Package Type | TO-247 | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 155mΩ | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | -1.7V | |
| Typical Gate Charge Qg @ Vgs | 48nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 30 V | |
| Maximum Power Dissipation Pd | 165W | |
| Maximum Operating Temperature | 150°C | |
| Height | 20.95mm | |
| Length | 15.94mm | |
| Width | 5.02 mm | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Toshiba | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 20A | ||
Maximum Drain Source Voltage Vds 600V | ||
Series TK | ||
Package Type TO-247 | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 155mΩ | ||
Channel Mode Enhancement | ||
Forward Voltage Vf -1.7V | ||
Typical Gate Charge Qg @ Vgs 48nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 30 V | ||
Maximum Power Dissipation Pd 165W | ||
Maximum Operating Temperature 150°C | ||
Height 20.95mm | ||
Length 15.94mm | ||
Width 5.02 mm | ||
Standards/Approvals No | ||
Automotive Standard No | ||
- COO (Country of Origin):
- CN
MOSFET N-Channel, TK2x Series, Toshiba
MOSFET Transistors, Toshiba
Related links
- Toshiba TK Type N-Channel MOSFET 600 V Enhancement, 3-Pin TO-247
- Toshiba TK Type N-Channel MOSFET 600 V Enhancement, 3-Pin TO-247
- Toshiba TK Type N-Channel MOSFET 600 V EnhancementS1VF(S
- Toshiba TK Type N-Channel MOSFET 600 V EnhancementS1VF(S
- Toshiba TK Type N-Channel MOSFET 600 V Enhancement, 3-Pin TO-3P
- Toshiba TK Type N-Channel MOSFET 600 V EnhancementS5VX(M
- Toshiba TK Type N-Channel MOSFET 600 V EnhancementS1VQ(O
- Toshiba TK Type N-Channel MOSFET 600 V EnhancementS5VX(M