Infineon OptiMOS 3 Type N-Channel MOSFET, 25 A, 250 V Enhancement, 3-Pin TO-263 IPB600N25N3GATMA1
- RS Stock No.:
- 826-9204
- Mfr. Part No.:
- IPB600N25N3GATMA1
- Manufacturer:
- Infineon
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Units | Per unit | Per Pack* |
|---|---|---|
| 10 - 240 | HK$24.32 | HK$243.20 |
| 250 - 490 | HK$23.71 | HK$237.10 |
| 500 + | HK$23.35 | HK$233.50 |
*price indicative
- RS Stock No.:
- 826-9204
- Mfr. Part No.:
- IPB600N25N3GATMA1
- Manufacturer:
- Infineon
Specifications
Product overview and Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 25A | |
| Maximum Drain Source Voltage Vds | 250V | |
| Series | OptiMOS 3 | |
| Package Type | TO-263 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 60mΩ | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 136W | |
| Forward Voltage Vf | 1V | |
| Typical Gate Charge Qg @ Vgs | 22nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | No | |
| Length | 10.31mm | |
| Height | 4.57mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 25A | ||
Maximum Drain Source Voltage Vds 250V | ||
Series OptiMOS 3 | ||
Package Type TO-263 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 60mΩ | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 136W | ||
Forward Voltage Vf 1V | ||
Typical Gate Charge Qg @ Vgs 22nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals No | ||
Length 10.31mm | ||
Height 4.57mm | ||
Automotive Standard No | ||
Infineon OptiMOS 3 Series MOSFET, 250V Drain Source Voltage, 25A Continuous Drain Current - IPB600N25N3GATMA1
This MOSFET is a high-voltage N-channel switching transistor designed for power conversion and switching tasks in demanding electronic systems. It operates across a very wide temperature span and is configured for surface-mount implementation, offering a compact footprint for thermal management in assemblies where robust power handling and gate control are required.
Features and Benefits:
• 250V drain-to-source rating enables high-voltage switching capability
• 60mΩ on-resistance reduces conduction losses and improves efficiency
• 25A continuous drain current supports sustained high-load operation
• 136W power dissipation permits significant heat handling in circuits
• 22nC gate charge affords predictable switching energy and drive design
• 20V gate-source limit allows standard gate-drive voltage margins
• 60mΩ on-resistance reduces conduction losses and improves efficiency
• 25A continuous drain current supports sustained high-load operation
• 136W power dissipation permits significant heat handling in circuits
• 22nC gate charge affords predictable switching energy and drive design
• 20V gate-source limit allows standard gate-drive voltage margins
Applications
• Suitable for high-voltage SMPS primary switching stages
• Ideal for industrial motor-drive inverter legs
• Used for DC-DC converters in telecoms power systems
• Can be used for battery management and charger topology
• Employed in general-purpose power switching on surface-mounted boards
• Ideal for industrial motor-drive inverter legs
• Used for DC-DC converters in telecoms power systems
• Can be used for battery management and charger topology
• Employed in general-purpose power switching on surface-mounted boards
What thermal range can it tolerate during operation?
It is rated to function from -55°C up to 175°C, allowing use in environments with extreme temperature variation.
Which package type facilitates assembly and heat transfer?
It comes in a TO-263 surface-mount package that eases solder mounting and offers a large thermal pad for resistor heat spreading.
How does the device behave for gate-drive design?
The typical gate charge of 22nC provides a quantifiable switching energy to size gate drivers and estimate switching losses.
What conduction performance should designers expect under load?
With a maximum specified drain-source resistance of 60mΩ, designers can calculate conduction losses for current paths up to the rated continuous 25A.
Related links
- Infineon OptiMOS 3 Type N-Channel MOSFET 250 V Enhancement, 3-Pin TO-263
- Infineon OptiMOS 3 Type N-Channel MOSFET 250 V Enhancement, 8-Pin TDSON
- Infineon OptiMOS 3 Type N-Channel MOSFET 250 V Enhancement, 8-Pin TDSON BSC600N25NS3GATMA1
- Infineon OptiMOS 3 Type N-Channel MOSFET 250 V Enhancement, 3-Pin TO-263
- Infineon OptiMOS 3 Type N-Channel MOSFET 250 V Enhancement, 3-Pin TO-263 IPB200N25N3GATMA1
- Infineon OptiMOS 3 Type N-Channel MOSFET 100 V Enhancement, 3-Pin TO-263
- Infineon OptiMOS 3 Type N-Channel MOSFET 150 V Enhancement, 3-Pin TO-263
- Infineon OptiMOS 3 Type N-Channel MOSFET 60 V Enhancement, 3-Pin TO-263