N-Channel MOSFET, 25 A, 250 V, 3-Pin D2PAK Infineon IPB600N25N3GATMA1

RS Stock No.:: 826-9204
Mfr. Part No.:: IPB600N25N3GATMA1
Manufacturer:: Infineon

N-Channel MOSFET, 25 A, 250 V, 3-Pin D2PAK Infineon IPB600N25N3GATMA1

Bulk discount available

Price Each (In a Pack of 10)

HK$19.06

1000 In stock for delivery within 3 working days*

* Delivery dates may change based on your chosen quantity and delivery address.

FREE delivery for orders over HK$850.00

Units	Per unit	Per Pack**
10 - 240	HK$19.06	HK$190.60
250 - 490	HK$18.58	HK$185.80
500 +	HK$18.30	HK$183.00

**price indicative

RS Stock No.:: 826-9204
Mfr. Part No.:: IPB600N25N3GATMA1
Manufacturer:: Infineon

IPB600N25N3 G, IPP600N25N3 G, IPI600N25N3 G, OptiMOS3 Power-Transistor
ESD Control Selection Guide V1

Attribute	Value
Channel Type	N
Maximum Continuous Drain Current	25 A
Maximum Drain Source Voltage	250 V
Package Type	D2PAK (TO-263)
Series	OptiMOS™ 3
Mounting Type	Surface Mount
Pin Count	3
Maximum Drain Source Resistance	60 mΩ
Channel Mode	Enhancement
Maximum Gate Threshold Voltage	4V
Minimum Gate Threshold Voltage	2V
Maximum Power Dissipation	136 W
Transistor Configuration	Single
Maximum Gate Source Voltage	-20 V, +20 V
Typical Gate Charge @ Vgs	22 nC @ 10 V
Maximum Operating Temperature	+175 °C
Length	10.31mm
Number of Elements per Chip	1
Width	9.45mm
Transistor Material	Si
Height	4.57mm
Minimum Operating Temperature	-55 °C

N-Channel MOSFET, 25 A, 250 V, 3-Pin D2PAK Infineon IPB600N25N3GATMA1

FREE delivery for orders over HK$850.00

Infineon OptiMOS™3 Power MOSFETs, 100V and over