Vishay SiHF634S Type N-Channel MOSFET, 8.1 A, 250 V Enhancement, 3-Pin TO-263 SIHF634S-GE3

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Subtotal (1 pack of 10 units)*

HK$111.58

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Units
Per unit
Per Pack*
10 - 10HK$11.158HK$111.58
20 - 20HK$10.878HK$108.78
30 +HK$10.711HK$107.11

*price indicative

Packaging Options:
RS Stock No.:
815-2632
Mfr. Part No.:
SIHF634S-GE3
Manufacturer:
Vishay
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Brand

Vishay

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

8.1A

Maximum Drain Source Voltage Vds

250V

Series

SiHF634S

Package Type

TO-263

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

450mΩ

Channel Mode

Enhancement

Typical Gate Charge Qg @ Vgs

41nC

Maximum Power Dissipation Pd

74W

Forward Voltage Vf

2V

Maximum Gate Source Voltage Vgs

20 V

Minimum Operating Temperature

-55°C

Maximum Operating Temperature

150°C

Standards/Approvals

No

Length

10.67mm

Height

4.83mm

Width

9.65 mm

Automotive Standard

No

COO (Country of Origin):
CN

N-Channel MOSFET, 200V to 250V, Vishay Semiconductor


MOSFET Transistors, Vishay Semiconductor


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