Dual N/P-Channel-Channel MOSFET, 4.7 A, 6.8 A, 40 V, 8-Pin SOIC Vishay SI4599DY-T1-GE3

RS Stock No.:: 812-3233
Mfr. Part No.:: SI4599DY-T1-GE3
Manufacturer:: Vishay

Dual N/P-Channel-Channel MOSFET, 4.7 A, 6.8 A, 40 V, 8-Pin SOIC Vishay SI4599DY-T1-GE3

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Bulk discount available

Subtotal (1 pack of 20 units)**

Was HK$115.88

You pay

HK$101.40

9680 In stock for delivery within 3 working days*

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Units	Per unit	Per Pack**
20 - 620	HK$5.07	HK$101.40
640 - 1240	HK$4.945	HK$98.90
1260 +	HK$4.865	HK$97.30

**price indicative

RS Stock No.:: 812-3233
Mfr. Part No.:: SI4599DY-T1-GE3
Manufacturer:: Vishay

Si4599DY, N- and P-Channel 40V (D-S) MOSFET
ESD Control Selection Guide V1

Attribute	Value
Channel Type	N, P
Maximum Continuous Drain Current	4.7 A, 6.8 A
Maximum Drain Source Voltage	40 V
Package Type	SOIC
Mounting Type	Surface Mount
Pin Count	8
Maximum Drain Source Resistance	42.5 mΩ, 62 mΩ
Channel Mode	Enhancement
Minimum Gate Threshold Voltage	1.2V
Maximum Power Dissipation	3 W, 3.1 W
Transistor Configuration	Isolated
Maximum Gate Source Voltage	-20 V, +20 V
Length	5mm
Maximum Operating Temperature	+150 °C
Number of Elements per Chip	2
Typical Gate Charge @ Vgs	11.7 nC @ 10 V, 25 nC @ 10 V
Width	4mm
Transistor Material	Si
Height	1.55mm
Minimum Operating Temperature	-55 °C

Dual N/P-Channel-Channel MOSFET, 4.7 A, 6.8 A, 40 V, 8-Pin SOIC Vishay SI4599DY-T1-GE3

FREE delivery for orders over HK$850.00

Dual N/P-Channel MOSFET, Vishay Semiconductor

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