N-Channel MOSFET, 12 A, 30 V, 8-Pin SOIC Vishay SI4178DY-T1-GE3

RS Stock No.:: 812-3205
Mfr. Part No.:: SI4178DY-T1-GE3
Manufacturer:: Vishay

N-Channel MOSFET, 12 A, 30 V, 8-Pin SOIC Vishay SI4178DY-T1-GE3

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Bulk discount available

Price Each (In a Pack of 20)**

HK$4.02

1920 In stock for delivery within 3 working days*

* Delivery dates may change based on your chosen quantity and delivery address.

FREE delivery for orders over HK$850.00

Units	Per unit	Per Pack**
20 - 620	HK$4.02	HK$80.40
640 - 1240	HK$3.92	HK$78.40
1260 +	HK$3.86	HK$77.20

**price indicative

RS Stock No.:: 812-3205
Mfr. Part No.:: SI4178DY-T1-GE3
Manufacturer:: Vishay

Si4178DY, N-Channel 30V (D-S) MOSFET
ESD Control Selection Guide V1

Attribute	Value
Channel Type	N
Maximum Continuous Drain Current	12 A
Maximum Drain Source Voltage	30 V
Package Type	SOIC
Mounting Type	Surface Mount
Pin Count	8
Maximum Drain Source Resistance	33 mΩ
Channel Mode	Enhancement
Minimum Gate Threshold Voltage	1.4V
Maximum Power Dissipation	5 W
Transistor Configuration	Single
Maximum Gate Source Voltage	-25 V, +25 V
Number of Elements per Chip	1
Maximum Operating Temperature	+150 °C
Length	5mm
Typical Gate Charge @ Vgs	7.5 nC @ 10 V
Width	4mm
Transistor Material	Si
Minimum Operating Temperature	-55 °C
Height	1.55mm

N-Channel MOSFET, 12 A, 30 V, 8-Pin SOIC Vishay SI4178DY-T1-GE3

FREE delivery for orders over HK$850.00

N-Channel MOSFET, 30V to 50V, Vishay Semiconductor