Vishay Si4178DY Type N-Channel MOSFET, 12 A, 30 V Enhancement, 8-Pin SOIC SI4178DY-T1-GE3
- RS Stock No.:
- 812-3205
- Mfr. Part No.:
- SI4178DY-T1-GE3
- Manufacturer:
- Vishay
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Subtotal (1 pack of 20 units)*
HK$82.70
FREE delivery for orders over HK$250.00
- 1,680 unit(s) ready to ship from another location
Units | Per unit | Per Pack* |
|---|---|---|
| 20 - 620 | HK$4.135 | HK$82.70 |
| 640 - 1240 | HK$4.035 | HK$80.70 |
| 1260 + | HK$3.97 | HK$79.40 |
*price indicative
- RS Stock No.:
- 812-3205
- Mfr. Part No.:
- SI4178DY-T1-GE3
- Manufacturer:
- Vishay
Select all | Attribute | Value |
|---|---|---|
| Brand | Vishay | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 12A | |
| Maximum Drain Source Voltage Vds | 30V | |
| Series | Si4178DY | |
| Package Type | SOIC | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 33mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 5W | |
| Typical Gate Charge Qg @ Vgs | 7.5nC | |
| Forward Voltage Vf | 0.85V | |
| Maximum Gate Source Voltage Vgs | 25V | |
| Maximum Operating Temperature | 150°C | |
| Height | 1.55mm | |
| Width | 4mm | |
| Standards/Approvals | RoHS | |
| Length | 5mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Vishay | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 12A | ||
Maximum Drain Source Voltage Vds 30V | ||
Series Si4178DY | ||
Package Type SOIC | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 33mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 5W | ||
Typical Gate Charge Qg @ Vgs 7.5nC | ||
Forward Voltage Vf 0.85V | ||
Maximum Gate Source Voltage Vgs 25V | ||
Maximum Operating Temperature 150°C | ||
Height 1.55mm | ||
Width 4mm | ||
Standards/Approvals RoHS | ||
Length 5mm | ||
Automotive Standard No | ||
- COO (Country of Origin):
- CN
Vishay Si4178DY Series MOSFET, 30V Maximum Drain Source Voltage, 12A Maximum Continuous Drain Current - SI4178DY-T1-GE3
Features and Benefits:
• 12A continuous current supports high-current load control
• 33mΩ Rds(on) reduces conduction losses in power paths
• 7.5nC typical gate charge allows fast gate transitions
• 5W power dissipation helps manage thermal load in small packages
Applications
• Ideal for battery management and power distribution
• Used with motor drivers for compact actuators
• Can be used for load switching in telecom equipment
What gate voltage limitations must designers observe?
How does thermal performance influence PCB layout decisions?
What ambient temperature range can it operate within?
What package and mounting considerations affect assembly?
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