onsemi Isolated PowerTrench 2 Type N-Channel MOSFET, 3 A, 20 V Enhancement, 6-Pin SOT-23 FDC6401N

RS Stock No.:: 809-0852
Mfr. Part No.:: FDC6401N
Manufacturer:: onsemi

onsemi Isolated PowerTrench 2 Type N-Channel MOSFET, 3 A, 20 V Enhancement, 6-Pin SOT-23 FDC6401N

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Bulk discount available

Subtotal (1 tape of 20 units)*

HK$49.00

FREE delivery for orders over HK$250.00

In Stock

7,040 unit(s) ready to ship from another location

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Units	Per unit	Per Tape*
20 - 740	HK$2.45	HK$49.00
760 - 1480	HK$2.40	HK$48.00
1500 +	HK$2.35	HK$47.00

*price indicative

RS Stock No.:: 809-0852
Mfr. Part No.:: FDC6401N
Manufacturer:: onsemi

Specifications

Product overview and Technical data sheets

Legislation and Compliance

Product Details

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Select all	Attribute	Value
	Brand	onsemi
	Channel Type	Type N
	Product Type	MOSFET
	Maximum Continuous Drain Current Id	3A
	Maximum Drain Source Voltage Vds	20V
	Series	PowerTrench
	Package Type	SOT-23
	Mount Type	Surface
	Pin Count	6
	Maximum Drain Source Resistance Rds	106mΩ
	Channel Mode	Enhancement
	Forward Voltage Vf	1.7V
	Maximum Power Dissipation Pd	960mW
	Typical Gate Charge Qg @ Vgs	3.3nC
	Maximum Gate Source Voltage Vgs	12 V
	Minimum Operating Temperature	-55°C
	Transistor Configuration	Isolated
	Maximum Operating Temperature	150°C
	Standards/Approvals	No
	Width	1.7 mm
	Length	3mm
	Height	1mm
	Number of Elements per Chip	2
	Automotive Standard	No

	Select all
	Brand onsemi
	Channel Type Type N
	Product Type MOSFET
	Maximum Continuous Drain Current Id 3A
	Maximum Drain Source Voltage Vds 20V
	Series PowerTrench
	Package Type SOT-23
	Mount Type Surface
	Pin Count 6
	Maximum Drain Source Resistance Rds 106mΩ
	Channel Mode Enhancement
	Forward Voltage Vf 1.7V
	Maximum Power Dissipation Pd 960mW
	Typical Gate Charge Qg @ Vgs 3.3nC
	Maximum Gate Source Voltage Vgs 12 V
	Minimum Operating Temperature -55°C
	Transistor Configuration Isolated
	Maximum Operating Temperature 150°C
	Standards/Approvals No
	Width 1.7 mm
	Length 3mm
	Height 1mm
	Number of Elements per Chip 2
	Automotive Standard No

PowerTrench® Dual N-Channel MOSFET, Fairchild Semiconductor

ON Semis PowerTrench® MOSFETS are optimised power switched that offer increased system efficiency and power density. They combine small gate charge, small reverse recovery and a soft reverse recovery body diode to contribute to fast switching of synchronous rectification in AC/DC power supplies.

The soft body diode performance of the PowerTrench® MOSFETs is able to eliminate snubber circuit or replace a higher voltage rating MOSFET.

MOSFET Transistors, ON Semi

ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The Advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.

ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.

onsemi Isolated PowerTrench 2 Type N-Channel MOSFET, 3 A, 20 V Enhancement, 6-Pin SOT-23 FDC6401N

FREE delivery for orders over HK$250.00

PowerTrench® Dual N-Channel MOSFET, Fairchild Semiconductor

MOSFET Transistors, ON Semi

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