IXYS Type N-Channel MOSFET, 26 A, 500 V Enhancement, 3-Pin TO-220 IXFP26N50P3
- RS Stock No.:
- 802-4436
- Distrelec Article No.:
- 304-36-392
- Mfr. Part No.:
- IXFP26N50P3
- Manufacturer:
- IXYS
The image is for reference only, please refer to product details and specifications
Bulk discount available
Subtotal (1 pack of 2 units)*
HK$140.60
FREE delivery for orders over HK$250.00
Temporarily out of stock
- Shipping from 19 November 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 2 - 12 | HK$70.30 | HK$140.60 |
| 14 - 24 | HK$68.55 | HK$137.10 |
| 26 + | HK$67.50 | HK$135.00 |
*price indicative
- RS Stock No.:
- 802-4436
- Distrelec Article No.:
- 304-36-392
- Mfr. Part No.:
- IXFP26N50P3
- Manufacturer:
- IXYS
Specifications
Product overview and Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | IXYS | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 26A | |
| Maximum Drain Source Voltage Vds | 500V | |
| Package Type | TO-220 | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 240mΩ | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | 1.4V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 500W | |
| Maximum Gate Source Voltage Vgs | 30 V | |
| Typical Gate Charge Qg @ Vgs | 42nC | |
| Maximum Operating Temperature | 150°C | |
| Width | 4.83 mm | |
| Height | 16mm | |
| Length | 10.66mm | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand IXYS | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 26A | ||
Maximum Drain Source Voltage Vds 500V | ||
Package Type TO-220 | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 240mΩ | ||
Channel Mode Enhancement | ||
Forward Voltage Vf 1.4V | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 500W | ||
Maximum Gate Source Voltage Vgs 30 V | ||
Typical Gate Charge Qg @ Vgs 42nC | ||
Maximum Operating Temperature 150°C | ||
Width 4.83 mm | ||
Height 16mm | ||
Length 10.66mm | ||
Standards/Approvals No | ||
Automotive Standard No | ||
N-channel Power MOSFET, IXYS HiperFET™ Polar3™ Series
A range of IXYS Polar3™ series N-channel Power MOSFETs with Fast Intrinsic Diode (HiPerFET™)
MOSFET Transistors, IXYS
A wide range of Advanced discrete Power MOSFET devices from IXYS
Related links
- IXYS Type N-Channel MOSFET 500 V Enhancement, 3-Pin TO-220
- IXYS Type N-Channel MOSFET 500 V Enhancement, 3-Pin TO-3P
- IXYS Type N-Channel MOSFET 500 V Enhancement, 3-Pin TO-247
- IXYS Type N-Channel MOSFET 500 V Enhancement, 3-Pin TO-3P IXFQ26N50P3
- IXYS Type N-Channel MOSFET 500 V Enhancement, 3-Pin TO-247 IXFH26N50P3
- IXYS Type N-Channel MOSFET 500 V Enhancement, 3-Pin TO-247 IXFH26N50P
- IXYS Type N-Channel MOSFET 500 V Enhancement, 3-Pin TO-220
- IXYS Type N-Channel MOSFET 600 V Enhancement, 3-Pin TO-247